公开(公告)号：US08413604B2

公开(公告)日：2013-04-09

申请号：US11564134

申请日：2006-11-28

申请人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US06432259B1

公开(公告)日：2002-08-13

申请号：US09461682

申请日：1999-12-14

申请人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

发明人： Hamid Noorbakhsh ,  Michael Welch ,  Siamak Salimian ,  Paul Luscher ,  Hongching Shan ,  Kaushik Vaidya ,  Jim Carducci ,  Evans Lee

IPC分类号： H05H100

CPC分类号： H01J37/32522 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.

摘要翻译： 体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。 用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。 冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

公开(公告)号：US5989349A

公开(公告)日：1999-11-23

申请号：US881601

申请日：1997-06-24

申请人： Kuang-Han Ke ,  Roger A. Lindley ,  Hongching Shan ,  Richard R. Mett

发明人： Kuang-Han Ke ,  Roger A. Lindley ,  Hongching Shan ,  Richard R. Mett

IPC分类号： H01L21/66 ,  H01J37/32 ,  H01L21/00 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/67109 ,  H01J37/32935 ,  H01L21/67253 ,  H01L21/68785 ,  H01J2237/244

摘要： A diagnostic pedestal assembly for measuring ion current and DC bias voltage within a high-power plasma reaction chamber of a semiconductor wafer processing system. The diagnostic pedestal assembly contains an aperture located in a surface of the pedestal and a probe element that is supported within the aperture.

摘要翻译： 一种用于测量半导体晶片处理系统的大功率等离子体反应室内的离子电流和DC偏置电压的诊断基座组件。 诊断基座组件包括位于基座的表面中的孔和支撑在孔内的探针元件。

公开(公告)号：US5843847A

公开(公告)日：1998-12-01

申请号：US639388

申请日：1996-04-29

申请人： Bryan Pu ,  Hongching Shan ,  Michael Welch

发明人： Bryan Pu ,  Hongching Shan ,  Michael Welch

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116

摘要： A method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, the substrate is placed in a process zone, and a plasma is formed from process gas introduced into the process zone. The process gas comprises (i) fluorocarbon gas for etching the dielectric layer and for forming passivating deposits on the substrate, (ii) carbon-oxygen gas for enhancing formation of the passivating deposits, and (iii) nitrogen-containing gas for etching the passivating deposits on the substrate. The volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected to provide a dielectric to resist etching selectivity ratio of at least about 10:1, an etch rate microloading of

摘要翻译： 描述了以高蚀刻选择性，低刻蚀速率微载物和高蚀刻速率蚀刻衬底上的电介质层的方法。 在该方法中，将衬底放置在工艺区域中，并且将等离子体从引入工艺区域的工艺气体形成。 工艺气体包括（i）用于蚀刻介电层并用于在衬底上形成钝化沉积物的碳氟化合物气体，（ii）用于增强钝化沉积物形成的碳 - 氧气，和（iii）用于蚀刻钝化的含氮气体 沉积在基材上。 选择氟碳：碳 - 氧：含氮气体的体积流量比以提供电介质以抵抗至少约10:1的蚀刻选择率，<10％的蚀刻速率微载荷，以及在 至少约100nm / min。 优选地，选择氟碳：碳 - 氧：含氮气体的体积流量比，使得新蚀刻特征的侧壁上的钝化沉积物的形成速率近似等于钝化沉积物的去除速率。

公开(公告)号：US5674321A

公开(公告)日：1997-10-07

申请号：US431178

申请日：1995-04-28

申请人： Bryan Pu ,  Hongching Shan

发明人： Bryan Pu ,  Hongching Shan

IPC分类号： H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H05H1/46

摘要： A magnetic field enhanced plasma etch reactor system for generating a radially-directed magnetic field within a reaction chamber. The reactor system comprises a reaction chamber for containing a plasma and a plurality of electromagnetic coils disposed about a reaction region within the reaction chamber. When each coil is driven with a current of similar magnitude, the electromagnetic coils produce a radially-directed magnetic field within the reaction chamber. The radially-directed magnetic field uniformly distributes the plasma throughout a bulk plasma region. Consequently, a substrate that is etched by such a uniform plasma has an improved uniformity in the etch pattern on the substrate.

摘要翻译： 一种用于在反应室内产生径向磁场的磁场增强等离子体蚀刻反应器系统。 反应器系统包括用于容纳等离子体的反应室和设置在反应室内的反应区域周围的多个电磁线圈。 当每个线圈以类似大小的电流驱动时，电磁线圈在反应室内产生径向定向的磁场。 径向磁场将等离子体均匀地分布在整个等离子体区域中。 因此，通过这种均匀等离子体蚀刻的衬底具有改进的衬底上的蚀刻图案的均匀性。

公开(公告)号：US20070113979A1

公开(公告)日：2007-05-24

申请号：US11564134

申请日：2006-11-28

申请人： Rene George ,  Andreas Kadavanich ,  Daniel Devine ,  Stephen Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel Devine ,  Stephen Savas ,  John Zajac ,  Hongching Shan

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US06568346B2

公开(公告)日：2003-05-27

申请号：US09929902

申请日：2001-08-14

申请人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

发明人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

IPC分类号： C23C16507

CPC分类号： H01J37/321

摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

摘要翻译： 用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。 在第一方面，楔形感应线圈阵列分布在一个圆周围。 相邻线圈的侧面是平行的，从而增强阵列产生的磁场的径向均匀性。 在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。 在一个实施例中，一个线圈的热端连接到RF电源的不平衡输出端，另一个线圈的热端通过电容器连接到电接地，电容器以RF的频率与后一个线圈谐振 电源。

公开(公告)号：US6074514A

公开(公告)日：2000-06-13

申请号：US20959

申请日：1998-02-09

申请人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

发明人： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02

CPC分类号： H01J37/32871

摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

公开(公告)号：US6022446A

公开(公告)日：2000-02-08

申请号：US517178

申请日：1995-08-21

申请人： Hongching Shan ,  Bryan Pu ,  Ji Ding ,  Michael Welch

发明人： Hongching Shan ,  Bryan Pu ,  Ji Ding ,  Michael Welch

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266

摘要： The present invention is embodied in a plasma reactor for processing a workpiece such as a semiconductor wafer having an axis of symmetry, the reactor including a reactor chamber with a ceiling, a pedestal for supporting the workpiece within the chamber under the ceiling, a processing gas supply inlet into the chamber, an RF plasma power source coupled to the pedestal, and a magnetic field source near the ceiling providing a radially symmetrical magnetic field relative to the axis of symmetry within a portion of the chamber near the ceiling. The magnetic field source can include an electromagnet or plural magnets disposed over the ceiling in a radially symmetrical fashion with respect to the axis of symmetry. The plural magnets may be permanent magnets or electromagnets. The radially symmetrical magnetic field penetrates from the ceiling into the chamber to a shallow depth, and the height of the ceiling above the workpiece exceeds the depth.

摘要翻译： 本发明体现在用于处理诸如具有对称轴的半导体晶片的工件的等离子体反应器中，该反应器包括具有天花板的反应室，用于将工件支撑在天花板下方的室内的处理气体 供应入室的入口，耦合到基座的RF等离子体电源以及靠近天花板的磁场源，在靠近天花板的腔室的一部分内相对于对称轴提供径向对称的磁场。 磁场源可以包括相对于对称轴线以径向对称的方式设置在天花板上方的电磁体或多个磁体。 多个磁体可以是永磁体或电磁体。 径向对称的磁场从天花板穿透入室至浅深度，工件上方天花板的高度超过深度。

公开(公告)号：US5814563A

公开(公告)日：1998-09-29

申请号：US660966

申请日：1996-06-12

申请人： Ji Ding ,  Hongching Shan ,  Michael Welch

发明人： Ji Ding ,  Hongching Shan ,  Michael Welch

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31116

摘要： A method of etching a dielectric layer (20) on a substrate (25) with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, a substrate (25) having a dielectric layer (20) with resist material thereon, is placed in a process zone (55), and a process gas is introduced into the process zone (55). The process gas comprises (i) fluorohydrocarbon gas for forming fluorine-containing etchant species capable of etching the dielectric layer (20), (ii) NH.sub.3 -generating gas having a liquefaction temperature L.sub.T in a range of temperatures .DELTA.T of from about -60.degree. C. to about 20.degree. C., and (iii) carbon-oxygen gas. The temperature of substrate (25) is maintained within about .+-.50.degree. C. of the liquefaction temperature L.sub.T of the NH.sub.3 -generating gas. A plasma is formed from the process gas to etch the dielectric layer (20) on the substrate (25). Preferably, the volumetric flow ratio of fluorohydrocarbon:NH.sub.3 -generating gas is from about 2.5:1 to about 7:1.

摘要翻译： 描述了以高蚀刻选择性，低蚀刻速率微加载和高蚀刻速率蚀刻衬底（25）上的介电层（20）的方法。 在该方法中，将具有其上具有抗蚀材料的电介质层（20）的基板（25）放置在处理区（55）中，并且处理气体被引入到处理区（55）中。 工艺气体包括（i）用于形成能够蚀刻介电层（20）的含氟蚀刻剂物质的氟代烃气体，（ii）在约-60℃的温度范围T T下具有液化温度LT的NH 3产生气体 约20℃，（iii）碳 - 氧气。 衬底（25）的温度保持在产生NH 3的气体的液化温度LT的约+/- 50℃内。 从处理气体形成等离子体，以蚀刻衬底（25）上的介质层（20）。 优选地，氟代烃：产生NH 3的气体的体积流量比为约2.5:1至约7:1。