发明授权
- 专利标题： Integrated insulated gate field effect transistors with thin insulation region between field insulation regions
- 专利标题（中）： 集成绝缘栅场效应晶体管，在绝缘区域之间具有薄绝缘区域
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申请号： US634814申请日： 1996-04-19
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公开(公告)号： US5675171A公开(公告)日： 1997-10-07
- 发明人: Tetsuya Kokubun
- 申请人： Tetsuya Kokubun
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-095455 19950420
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/762 ; H01L21/82 ; H01L21/822 ; H01L27/04 ; H01L27/08 ; H01L27/118 ; H01L29/78 ; H01L27/092
摘要：
Disclosed is a semiconductor device, which has: a first device-separating insulating film which is formed on a semiconductor substrate and extends in a first(Y) direction; a second device-separating insulting film which is formed on said semiconductor substrate and extends in a second(X) direction normal to the first(Y) direction; a first-conductivity-type device region which is formed on the semiconductor substrate and is sectioned by the first and second device-separating insulating films; and a first first-conductive-type high concentration impurity layer which is formed under the first device-separating insulating film and extends in the first(Y) direction; wherein the second device-separating insulating film is connected with the first device-separating insulating film through an insulating film thinner than both the first and second device-separating insulating films, the thin insulating film extending over the first high concentration impurity layer to separate the device region arranged in the second(X) direction from each other by the first device-separating insulating film and the first high concentration impurity layer, and the device region arranged in the first(Y) direction is separated by the second device-separating insulating film and the thin insulating film.
公开/授权文献
- US5086270A Probe apparatus 公开/授权日：1992-02-04
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