发明授权
US5677227A Method of fabricating single crown, extendible to triple crown, stacked
capacitor structures, using a self-aligned capacitor node contact
失效
使用自对准电容器节点接触制造单冠，可扩展到三冠，堆叠电容器结构的方法
- 专利标题： Method of fabricating single crown, extendible to triple crown, stacked capacitor structures, using a self-aligned capacitor node contact
- 专利标题（中）： 使用自对准电容器节点接触制造单冠，可扩展到三冠，堆叠电容器结构的方法
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申请号： US709898申请日： 1996-09-09
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公开(公告)号： US5677227A公开(公告)日： 1997-10-14
- 发明人: Fu-Liang Yang , Erik S. Jeng
- 申请人： Fu-Liang Yang , Erik S. Jeng
- 申请人地址： TWX Hsin-Chu
- 专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L27/108
摘要：
A process for creating a stacked capacitor, dynamic random access memory device, featuring increased capacitor surface area, resulting from a polysilicon, triple crown shaped, lower electrode structure, and also featuring self-alignment of the stacked capacitor contact structure, to a bit line contact structure, has been developed. The triple crown shaped, lower electrode structure is comprised of polysilicon spacers, formed via use of polysilicon and silicon oxide, low pressure chemical deposition, and anisotropic RIE, procedures.
公开/授权文献
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