A pattern exposure method including the steps of irradiating a mask or reticle having a desired original pattern written thereon with light with a desired directivity from an illuminating light source for exposure, and projecting a transmitted or reflected light from said mask to an object to be exposed through a projection optical system, wherein a pattern-dependent polarizing mask for giving polarization characteristics in compliance with the direction of the pattern on the mask to the illuminating light transmitted through the pattern; and a pattern exposure apparatus including a illuminating light for exposure, a mask or a reticle, an illumination optical system for irradiating the mask with light emitted from the light source, and a projection optical system for projecting the transmitted or reflected light from the mask onto the object to be exposed, further including polarizing unit for polarizing the illuminating light on the pupil of the projection optical system so as to be nearly rotationally symmetric with respect to the center of the pupil when the mask is not used; and a mask, used with said pattern exposure apparatus, for giving pattern-dependent polarization characteristics; and a semiconductor integrated circuit including fine patterns at least in two directions formed by the pattern exposure method using the pattern-dependent polarizing mask.