公开(公告)号：US5677755A

公开(公告)日：1997-10-14

申请号：US330726

申请日：1994-10-28

申请人： Yoshitada Oshida ,  Yasuhiko Nakayama ,  Masahiro Watanabe ,  Minoru Yoshida ,  Kenichirou Fukuda

发明人： Yoshitada Oshida ,  Yasuhiko Nakayama ,  Masahiro Watanabe ,  Minoru Yoshida ,  Kenichirou Fukuda

IPC分类号： G03F7/20 ,  H01L21/30

CPC分类号： G03F7/70566 ,  G03F7/70125 ,  G03F7/70241

摘要： A pattern exposure method including the steps of irradiating a mask or reticle having a desired original pattern written thereon with light with a desired directivity from an illuminating light source for exposure, and projecting a transmitted or reflected light from said mask to an object to be exposed through a projection optical system, wherein a pattern-dependent polarizing mask for giving polarization characteristics in compliance with the direction of the pattern on the mask to the illuminating light transmitted through the pattern; and a pattern exposure apparatus including a illuminating light for exposure, a mask or a reticle, an illumination optical system for irradiating the mask with light emitted from the light source, and a projection optical system for projecting the transmitted or reflected light from the mask onto the object to be exposed, further including polarizing unit for polarizing the illuminating light on the pupil of the projection optical system so as to be nearly rotationally symmetric with respect to the center of the pupil when the mask is not used; and a mask, used with said pattern exposure apparatus, for giving pattern-dependent polarization characteristics; and a semiconductor integrated circuit including fine patterns at least in two directions formed by the pattern exposure method using the pattern-dependent polarizing mask.

摘要翻译： 一种图案曝光方法，包括以下步骤：从用于曝光的照明光源照射具有期望的原始图案的具有期望的方向性的光的掩模或掩模版，并将来自所述掩模的透射或反射的光投射到待曝光的物体 通过投影光学系统，其中用于根据掩模上的图案的方向对透射通过图案的照明光提供偏振特性的图案相关偏光掩模; 以及包括用于曝光的照明光，掩模或掩模版，用于从光源发射的光照射掩模的照明光学系统的图案曝光装置，以及用于将来自掩模的透射或反射的光投射到 要曝光的物体，还包括偏振单元，用于使投影光学系统的光瞳上的照明光偏振，以便当不使用掩模时相对于瞳孔的中心几乎旋转对称; 以及与所述图案曝光装置一起使用的用于赋予图案相关偏振特性的掩模; 以及半导体集成电路，其包括通过使用图案相关偏光掩模的图案曝光方法形成的至少两个方向的精细图案。