发明授权
- 专利标题： Chemically amplified positive resist composition
- 专利标题（中）： 化学放大正光刻胶组合物
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申请号： US566703申请日： 1995-12-04
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公开(公告)号： US5679496A公开(公告)日： 1997-10-21
- 发明人: Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
- 申请人： Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.,Nippon Telegraph and Telephone Corp.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.,Nippon Telegraph and Telephone Corp.
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX6-329914 19941205
- 主分类号： C07C381/12
- IPC分类号： C07C381/12 ; G03F7/004 ; H01L21/027 ; G03F7/26
摘要：
A chemically amplified positive resist composition contains a novel trifluoromethanesulfonic or p-toluenesulfonic acid sulfonium salt having at least one tert-butoxycarbonylmethoxy group as an acid labile group. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.