发明授权
US5682045A Method of fabricating semiconductor device and semiconductor device
fabricated thereby
失效
制造半导体器件的方法和由此制造的半导体器件
- 专利标题： Method of fabricating semiconductor device and semiconductor device fabricated thereby
- 专利标题（中）： 制造半导体器件的方法和由此制造的半导体器件
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申请号： US525175申请日： 1995-09-08
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公开(公告)号： US5682045A公开(公告)日： 1997-10-28
- 发明人: Norio Hayafuji , Yoshitsugu Yamamoto
- 申请人： Norio Hayafuji , Yoshitsugu Yamamoto
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-215843 19940909
- 主分类号： H01L29/812
- IPC分类号： H01L29/812 ; H01L21/285 ; H01L21/324 ; H01L21/335 ; H01L21/338 ; H01L29/778 ; H01L31/0328
摘要：
An Si-doped AlInAs layer and an intrinsic AlInAs layer are successively grown on a semi-insulating InP substrate in a molecular beam epitaxy chamber. The sample is then heat-treated in a nitrogen ambient at 400.degree. C. for 18 minutes so that electrical characteristics of the sample are deteriorated because of the infiltration of fluorine into the Si-doped AlInAs layer. The sample is then placed in the molecular beam epitaxy chamber and reheat-treated in an ultra-high vacuum at 400.degree. C. for seven minutes and the fluorine is removed.
公开/授权文献
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