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公开(公告)号：US5426658A
公开(公告)日：1995-06-20
申请号：US200483
申请日：1994-02-23
申请人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
发明人： Nobuaki Kaneno , Hirotaka Kizuki , Norio Hayafuji , Tetsuo Shiba , Hitoshi Tada
CPC分类号： H01L21/3081 , H01L21/02392 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S2304/04 , H01S5/2081 , H01S5/2277 , H01S5/32325
摘要： A semiconductor laser device including a semiconductor substrate; a plurality of semiconductor layers including an AlGaAs layer epitaxially grown on said semiconductor substrate; a ridge having a reverse mesa shape and opposed sides formed of said plurality of semiconductor layers; an Al.sub.x Ga.sub.1-x As low temperature buffer layer (0.ltoreq..times..ltoreq.1) disposed on said AlGaAs layer at opposite sides of said ridge; a first semiconductor layer epitaxially disposed on said low temperature buffer layer at opposite sides of said ridge; and a second semiconductor layer epitaxially disposed on said ridge and said first semiconductor layer.
摘要翻译： 一种半导体激光器件，包括半导体衬底; 包括在所述半导体衬底上外延生长的AlGaAs层的多个半导体层; 具有反台面形状的脊和由所述多个半导体层形成的相对侧; 在所述脊的相对侧设置在所述AlGaAs层上的Al x Ga 1-x As低温缓冲层（0≤x≤1） 在所述脊的相对侧外延地设置在所述低温缓冲层上的第一半导体层; 以及外延地设置在所述脊和所述第一半导体层上的第二半导体层。
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2.发明授权Compound semiconductor structure including p-type and n-type regions doped with carbon 失效包括掺杂有碳的p型和n型区的化合物半导体结构
公开(公告)号：US5315133A
公开(公告)日：1994-05-24
申请号：US928746
申请日：1992-08-13
申请人： Norio Hayafuji
发明人： Norio Hayafuji
IPC分类号： H01L21/205 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01S5/00 , H01L33/00
CPC分类号： H01L21/0262 , H01L21/02546 , H01L21/02576 , H01L21/02579 , Y10S438/925
摘要： While depositing a III-V compound semiconductor layer from a vapor, carbon is added to group III and V elements to produce a p type conductivity region in the depositing semiconductor layer. Then, a small amount of n type dopant is added to the group III and V elements together with the carbon to produce an n type conductivity region in the depositing semiconductor layer. A sharp and precisely controlled doping profile is produced in the vicinity of a p-n junction, resulting in a semiconductor device having good initial performance and high reliability.
摘要翻译： 在从蒸气中沉积III-V化合物半导体层的同时，将碳添加到III族和V族元素中，以在沉积半导体层中产生p型导电性区域。 然后，少量的n型掺杂剂与碳一起添加到III族和V族元素中，以在沉积半导体层中产生n型导电性区域。 在p-n结附近产生尖锐和精确控制的掺杂分布，导致半导体器件具有良好的初始性能和高可靠性。
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3.发明授权Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure 失效半导体装置的制造方法，半导体激光装置的制造方法以及量子线结构的制造方法公开(公告)号：US06358316B1
公开(公告)日：2002-03-19
申请号：US08513036
申请日：1995-08-09
申请人： Hirotaka Kizuki , Norio Hayafuji , Tatsuya Kimura
发明人： Hirotaka Kizuki , Norio Hayafuji , Tatsuya Kimura
IPC分类号： C30B2504
CPC分类号： B82Y20/00 , B82Y10/00 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/30621 , H01L21/3081 , H01L21/314 , H01L29/66469 , H01S5/2081 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3203 , H01S5/32308 , H01S5/341 , H01S5/3432 , H01S5/4031 , H01S5/4043
摘要： In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap layer, the compound semiconductor wafer with the insulating mask pattern is immersed in an ammonium sulfide solution, the compound semiconductor wafer is selectively etched away using a chlorine containing gas in a reaction chamber, and a groove formed in the etching process is filled with a compound semiconductor layer grown in the reaction chamber by MOCVD. Therefore, a regrowth interface on which no impurity is segregated is attained, improving the quality of the regrown crystal layer.
摘要翻译： 在半导体装置的制造方法中，在包含铝的化合物半导体层上生长不含铝的化合物半导体盖层，在化合物半导体盖层的一部分上形成有掩模图案绝缘膜，具有 将绝缘掩模图案浸入硫化铵溶液中，在反应室中使用含氯气体选择性地蚀刻掉化合物半导体晶片，并且在蚀刻工艺中形成的凹槽中填充在反应室中生长的化合物半导体层， MOCVD。 因此，可以获得没有杂质分离的再生界面，提高再结晶层的质量。
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公开(公告)号：US6037242A
公开(公告)日：2000-03-14
申请号：US892994
申请日：1997-07-15
IPC分类号： C30B1/02 , H01L21/20 , H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： C30B1/023 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02502 , H01L21/02513 , H01L21/02546 , H01L21/02631
摘要： A method of preparing an AlInAs/GaAs hetero-structure includes forming an Al.sub.1-x In.sub.x As (0
摘要翻译： 制备AlInAs / GaAs异质结构的方法包括在GaAs衬底上形成非晶状态的Al 1-x In x As（0
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公开(公告)号：US5796127A
公开(公告)日：1998-08-18
申请号：US915791
申请日：1997-08-21
IPC分类号： H01L29/812 , H01L21/203 , H01L21/314 , H01L21/324 , H01L21/335 , H01L21/338 , H01L23/31 , H01L29/36 , H01L29/778 , H01L29/201 , H01L29/737
CPC分类号： H01L29/66462 , H01L21/314 , H01L21/3245 , H01L23/3185 , H01L29/365 , H01L2924/0002
摘要： A method of fabricating a semiconductor device includes forming a first mixed crystal semiconductor layer of AlAs and InAs; applying a solution containing a material easily combining with fluorine to the surface of the first mixed crystal semiconductor layer exposed to the atmosphere so that the material combines with fluorine that sticks to the surface of the first mixed crystal semiconductor layer; and annealing the first mixed crystal semiconductor layer in a vacuum. In this method, since the fluorine on the surface of the first mixed crystal semiconductor layer exposed to the atmosphere combines with the material included in the solution and is removed together with the material, a first mixed crystal semiconductor layer having no fluorine is produced. Therefore, unwanted infiltration of fluorine into the first mixed crystal semiconductor layer is avoided, resulting in a highly reliable semiconductor device with desired characteristics.
摘要翻译： 制造半导体器件的方法包括：形成AlAs和InAs的第一混晶半导体层; 将含有容易与氟结合的材料的溶液施加到暴露于大气的第一混晶半导体层的表面，使得该材料与粘附在第一混晶半导体层表面的氟结合; 以及在真空中退火所述第一混晶半导体层。 在该方法中，由于暴露于大气中的第一混晶半导体层的表面上的氟与包含在溶液中的材料结合，与材料一起被除去，因此产生不含氟的第一混晶半导体层。 因此，避免了氟进入第一混晶半导体层的不必要的渗入，导致具有所需特性的高度可靠的半导体器件。
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公开(公告)号：US5701321A
公开(公告)日：1997-12-23
申请号：US623378
申请日：1996-03-28
申请人： Norio Hayafuji , Zempei Kawazu
发明人： Norio Hayafuji , Zempei Kawazu
CPC分类号： H01S5/18305 , H01L27/156 , H01L33/007 , H01S5/0207 , H01S5/0213 , H01S5/18369 , H01S5/32341
摘要： A semiconductor laser includes an electrically insulating substrate having an opening; a first conductivity type first contact layer within the opening; a laminated semiconductor layer structure on the first contact layer and comprising a first cladding layer, an active layer, a second cladding layer, and a second contact layer wherein the first contact layer includes an aperture within the opening; a first electrode disposed on the electrically insulating substrate and extending to and contacting the first contact layer; and a second electrode in electrical contact with the second contact layer. The substrate is preferably sapphire, MgO, and spinel and the semiconductor layers are preferably GaN materials so that the laser emits short wavelength light. An electrode makes direct, reliable contact to the first cladding layer through an opening in the electrically insulating substrate without the need of mechanically working or etching the substrate.
摘要翻译： 半导体激光器包括具有开口的电绝缘基板; 在开口内的第一导电类型的第一接触层; 在所述第一接触层上的层叠半导体层结构，包括第一覆层，有源层，第二覆层和第二接触层，其中所述第一接触层在所述开口内包括孔; 第一电极，设置在所述电绝缘基板上并延伸到所述第一接触层并接触所述第一接触层; 以及与所述第二接触层电接触的第二电极。 基板优选为蓝宝石，MgO和尖晶石，半导体层优选为GaN材料，使得激光发射短波长的光。 电极通过电绝缘衬底中的开口直接，可靠地接触第一包层，而不需要机械加工或蚀刻衬底。
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公开(公告)号：US5677922A
公开(公告)日：1997-10-14
申请号：US589462
申请日：1996-01-22
申请人： Norio Hayafuji , Takashi Motoda
发明人： Norio Hayafuji , Takashi Motoda
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/164 , H01S5/0201 , H01S5/32325 , H01S5/34326 , H01S5/4031
摘要： A semiconductor laser according to the invention includes a compound semiconductor substrate having a surface with a first crystalline orientation; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and having a second crystalline orientation; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.
摘要翻译： 根据本发明的半导体激光器包括具有第一晶体取向的表面的化合物半导体衬底; 包括依次设置在半导体衬底的表面上的第一覆层，有源层和第二覆层，并且包括横向于半导体衬底的表面并且具有第二晶体取向的第一和第二窗表面; 设置在窗表面上的掺杂晶体半导体窗口层; 以及分别设置在结晶层和半导体衬底上的电极。
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公开(公告)号：US5439723A
公开(公告)日：1995-08-08
申请号：US150879
申请日：1993-11-12
CPC分类号： B28D5/0005 , B28D5/0011 , C30B33/00 , Y10T428/219 , Y10T428/24273 , Y10T428/24298 , Y10T428/24306 , Y10T428/24314 , Y10T428/24479 , Y10T428/2457 , Y10T428/24777
摘要： A semiconductor wafer includes a notch or a hole used in preparing an orientation flat on the wafer. The notch in the wafer includes a side that is perpendicular to the surfaces of the wafer and aligned along a cleavage plane of the wafer for forming the orientation flat by cleaving. A hole in a wafer preferably includes an axis aligned along the cleaving plane. A sharp, non-rounded cleavage is formed by preparing the notch or hole after the completion of any etching processes or other steps that may round the edges of the flat. The sharp edges aid in achieving a precision alignment using the orientation flat.
摘要翻译： 半导体晶片包括用于制备晶片上的定向平面的凹口或孔。 晶片中的凹口包括垂直于晶片表面并沿着晶片的解理平面排列的一侧，用于通过切割形成取向平面。 晶片中的孔优选地包括沿着切割平面对准的轴。 通过在完成任何蚀刻工艺之后制备凹口或孔而形成尖锐的非圆形裂纹，或者可以在平面边缘周围的其它步骤。 锋利的边缘有助于使用定向平板实现精确对准。
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9.发明授权
公开(公告)号：US5420066A
公开(公告)日：1995-05-30
申请号：US267211
申请日：1994-07-06
申请人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
发明人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/2219 , H01S5/32316
摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
摘要翻译： 根据本发明，在连续进行晶体生长以产生至少第一导电型下包层，有源层，AlAs组成比为0.38至0.6的AlGaAs的第二导电型第一上包层之后， 具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层 有机酸和过氧化氢，从而形成一个脊。 结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。
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10.发明授权
公开(公告)号：US5357535A
公开(公告)日：1994-10-18
申请号：US1547
申请日：1993-01-06
申请人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
发明人： Akihiro Shima , Takeshi Miura , Tomoko Kadowaki , Norio Hayafuji
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/2219 , H01S5/32316
摘要： In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
摘要翻译： 根据本发明，在连续进行晶体生长以产生至少第一导电型下包层和有源层之后，具有0.38至0.6的AlAs组成比的AlGaAs的第二导电型第一上包层， 具有大于0.6的AlAs组成比的AlGaAs的蚀刻停止层和AlAs组成比为0.38至0.6的AlGaAs的第二导电类型的第二上包层，使用包括以下的蚀刻剂来选择性地蚀刻第二上包层 有机酸和过氧化氢，从而形成一个脊。 结果，可以容易地制造具有期望的激光结构和低于830nm的振荡波长的脊型半导体激光器件，并且具有改进的可控性和再现性。
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