发明授权
- 专利标题: Growth of silicon single crystal
- 专利标题(中): 硅单晶的生长
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申请号: US621054申请日: 1996-03-22
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公开(公告)号: US5683504A公开(公告)日: 1997-11-04
- 发明人: Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
- 申请人: Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
- 申请人地址: JPX Saitama-ken JPX Hyogo-ken JPX Tokyo JPX Tokyo JPX Kanagawa-ken JPX Tokyo
- 专利权人: Research Development Corporation of Japan,Sumitomo Sitix Corporation,Toshiba Ceramics Co., Ltd.,Nippon Steel Corporation,Komatsu Electronic Metals Co., Ltd.,Mitsubishi Materials Corporation
- 当前专利权人: Research Development Corporation of Japan,Sumitomo Sitix Corporation,Toshiba Ceramics Co., Ltd.,Nippon Steel Corporation,Komatsu Electronic Metals Co., Ltd.,Mitsubishi Materials Corporation
- 当前专利权人地址: JPX Saitama-ken JPX Hyogo-ken JPX Tokyo JPX Tokyo JPX Kanagawa-ken JPX Tokyo
- 优先权: JPX7-091432 19950324
- 主分类号: C30B15/20
- IPC分类号: C30B15/20 ; C30B15/00 ; C30B29/06 ; H01L21/208
摘要:
When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of: R a=g.multidot..beta..multidot..DELTA.T.multidot.L/.kappa..multidot..nu. within the range of 5.times.10.sup.5 -4.times.10.sup.7, wherein g represents the acceleration of gravity, .beta. the volumetric expansion coefficient of the melt, L the depth of the melt, .kappa. thermal diffusivity and .nu. the kinematic viscocity. Since the convection mode of the melt at the interface of crystal growth is constantly held in the region of soft turbulence, a single crystal is grown under the stabilized temperature condition without the transfer of the impurity distribution in the melt into the growing single crystal.
公开/授权文献
- US5109843A Extra to-intracorporeal power supply 公开/授权日:1992-05-05
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