公开(公告)号：US5700320A

公开(公告)日：1997-12-23

申请号：US620391

申请日：1996-03-22

申请人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

发明人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

IPC分类号： C30B15/00 ,  C30B15/04

CPC分类号： C30B29/06 ,  C30B15/00

摘要： When a B or P-doped Si single crystal is pulled up from a B or P-doped melt by the Czochralski method, an element such as Ga, Sb or In having the effect to reduce the heat expansion coefficient of said melt at a temperature near the melting point is added to said melt. The additive element stabilizes the temperature condition of crystal growth so as to control the generation of eddy flows just below the interface of crystal growth. When a Ga or Sb-doped Si single crystal is pulled up from a Ga or Sb-doped melt, an element such as B or P having the effect to increase the heat expansion coefficient of said melt at a temperature near the melting point is added. The agitation of the melt just below the interface of crystal growth is accelerated by the addition of B or P, so as to assure the growth of a Si single crystal from the melt having impurity distribution made uniform along the radial direction. Accordingly, a Si single crystal is formed having a uniform impurity distribution along its lengthwise or radial direction.

摘要翻译： 当通过Czochralski方法从B或P掺杂的熔体中提取B或P掺杂的Si单晶时，可以使用诸如Ga，Sb或In的元素，其具有在温度下降低所述熔体的热膨胀系数 在熔点附近加入熔融物。 添加元素稳定了晶体生长的温度条件，从而控制刚好低于晶体生长界面的涡流的产生。 当从Ga或Sb掺杂的熔体中提取Ga或Sb掺杂的Si单晶时，添加诸如B或P的元素，其在熔点附近的温度下增加所述熔体的热膨胀系数， 。 通过添加B或P来促进刚好低于晶体生长界面的熔体的搅拌，以确保Si单晶从具有沿径向方向均匀的杂质分布的熔体生长。 因此，形成沿着其长度方向或径向方向具有均匀杂质分布的Si单晶。

公开(公告)号：US5683504A

公开(公告)日：1997-11-04

申请号：US621054

申请日：1996-03-22

申请人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

发明人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10S117/901

摘要： When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of: R a=g.multidot..beta..multidot..DELTA.T.multidot.L/.kappa..multidot..nu. within the range of 5.times.10.sup.5 -4.times.10.sup.7, wherein g represents the acceleration of gravity, .beta. the volumetric expansion coefficient of the melt, L the depth of the melt, .kappa. thermal diffusivity and .nu. the kinematic viscocity. Since the convection mode of the melt at the interface of crystal growth is constantly held in the region of soft turbulence, a single crystal is grown under the stabilized temperature condition without the transfer of the impurity distribution in the melt into the growing single crystal.

摘要翻译： 当从熔体中拉出单晶时，控制坩埚底部温度和晶体生长界面处的差ΔTA，以保持由以下公式定义的瑞利常数：R a = g xβ x DELTA TxL / kappa x nu在5×10 5 -4×10 7的范围内，其中g表示重力的加速度，β表示熔体的体积膨胀系数，L表示熔体的深度，κ热扩散率和nu的运动粘度。 由于晶体生长界面处的熔体的对流模式不断地保持在软湍流区域，所以在稳定的温度条件下生长单晶，而不会将熔体中的杂质分布转移到生长的单晶中。

公开(公告)号：US5704974A

公开(公告)日：1998-01-06

申请号：US620873

申请日：1996-03-22

申请人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

发明人： Koji Izunome ,  Souroku Kawanishi ,  Shinji Togawa ,  Atsushi Ikari ,  Hitoshi Sasaki ,  Shigeyuki Kimura

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B15/22

CPC分类号： C30B29/06 ,  C30B15/30

摘要： When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.

摘要翻译： 当将Si单晶8从容纳在坩埚2中的熔融物6拉出时，根据表面的熔体的温度分布来判断在熔体6中产生的涡流的状态。 根据判断结果，将气体，即N2，Xe或Kr，其引起熔体6的密度的异常偏差加到大气中，以保持涡流处于不稳定状态。 在来自熔融体的晶体生长的情况下，所述气体的效果是典型的，在该熔体中添加了具有抑制密度特别偏差的作用的诸如Ca，Sb，Al，As或In的掺杂剂。 由于单晶被从保持在表面的温度控制条件下的熔体中拉出，所以杂质分布和氧分布沿晶体生长方向均匀。 以这种方式获得的单晶具有高度稳定的质量。

公开(公告)号：US06617034B1

公开(公告)日：2003-09-09

申请号：US09601441

申请日：2000-08-01

申请人： Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

发明人： Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

IPC分类号： H01L21265

CPC分类号： H01L21/3226 ,  H01L21/26533 ,  H01L21/76243

摘要： A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm−2 or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm2.

摘要翻译： 提供了一种高质量的SOI衬底，其允许以其提高的成品率在其上形成LSI并实现优异的电性能及其制造方法。 SOI衬底通过在硅单晶衬底上形成嵌入的氧化物层并形成用于在嵌入的氧化物层上形成器件的SOI层而获得，并且其特征在于包含不密集的凹坑状缺陷的SOI层 大于5cm-2或密度小于1件/ cm2的包含针孔缺陷的嵌入式氧化物层。

公开(公告)号：US08043929B2

公开(公告)日：2011-10-25

申请号：US12120285

申请日：2008-05-14

申请人： Josef Brunner ,  Hiroyuki Deai ,  Atsushi Ikari ,  Martin Grassl ,  Atsuki Matsumura ,  Wilfried von Ammon

发明人： Josef Brunner ,  Hiroyuki Deai ,  Atsushi Ikari ,  Martin Grassl ,  Atsuki Matsumura ,  Wilfried von Ammon

IPC分类号： H01L21/265

CPC分类号： H01L21/76256 ,  H01L21/02126 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02299 ,  H01L21/02323 ,  H01L21/02351 ,  H01L21/26533 ,  H01L21/31658 ,  H01L21/76243

摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.

摘要翻译： 以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。 半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层 作为第三层的热氧化和变薄的结果。

公开(公告)号：US20050139961A1

公开(公告)日：2005-06-30

申请号：US11012935

申请日：2004-12-15

申请人： Josef Brunner ,  Hiroyuki Deai ,  Atsushi Ikari ,  Martin Grassl ,  Atsuki Matsumura ,  Wilfried Ammon

发明人： Josef Brunner ,  Hiroyuki Deai ,  Atsushi Ikari ,  Martin Grassl ,  Atsuki Matsumura ,  Wilfried Ammon

IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/316 ,  H01L21/762 ,  H01L27/12 ,  H01L29/165 ,  H01L29/786 ,  H01L29/06

CPC分类号： H01L21/26533 ,  H01L21/02126 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02299 ,  H01L21/02323 ,  H01L21/02351 ,  H01L21/31658 ,  H01L21/76243 ,  H01L21/76256

摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.

摘要翻译： 以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。 半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层 作为第三层的热氧化和变薄的结果。

公开(公告)号：US20080268613A1

公开(公告)日：2008-10-30

申请号：US12120285

申请日：2008-05-14

申请人： Josef Brunner ,  Hiroyuki Deai ,  Atsushi Ikari ,  Martin Grassl ,  Atsuki Matsumura ,  Wilfried von Ammon

发明人： Josef Brunner ,  Hiroyuki Deai ,  Atsushi Ikari ,  Martin Grassl ,  Atsuki Matsumura ,  Wilfried von Ammon

IPC分类号： H01L21/265

CPC分类号： H01L21/76256 ,  H01L21/02126 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02299 ,  H01L21/02323 ,  H01L21/02351 ,  H01L21/26533 ,  H01L21/31658 ,  H01L21/76243

摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.

摘要翻译： 以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。 半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层 作为第三层的热氧化和变薄的结果。

公开(公告)号：US07208043B2

公开(公告)日：2007-04-24

申请号：US10236273

申请日：2002-09-06

申请人： Akiyoshi Tachikawa ,  Atsushi Ikari

发明人： Akiyoshi Tachikawa ,  Atsushi Ikari

IPC分类号： C30B21/06

CPC分类号： C30B29/06 ,  C30B15/206 ,  C30B33/00 ,  Y10T428/12674

摘要： A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method and characterized by satisfying the relational expression (Oi DZ)−(COP DZ)≦10 μm wherein Oi DZ denotes a defect-free zone of oxygen precipitate crystal defects and COP DZ denotes a region devoid of a void type defect measuring not less than 0.11 μm in size, and having not less than 5×108 oxygen precipitate crystal defects per cm3. The method for making the substrate comprises the steps of deriving a silicon semiconductor substrate from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method using molten silicon containing not less than 5×1017 atoms and not more than 1.5×1019 atoms of nitrogen per cm3 and heat-treating the silicon semiconductor substrate in a non-oxidizing atmosphere at a highest final temperature of not lower than 1150° C. for not less than one hour.

摘要翻译： 硅半导体衬底具有具有氧沉淀缺陷的结构，以形成直接位于空隙型晶体的无缺陷区域的高密度的吸气位点。 硅半导体衬底通过对由Czochralski法生长的硅单晶衍生的硅半导体衬底或施加磁场的Czochralski法进行热处理而形成，其特征在于满足关系式（Oi DZ） - （COP DZ） =10μm，其中Oi DZ表示氧沉淀晶体缺陷的无缺陷区，COP DZ表示没有测量尺寸不小于0.11μm的空隙型缺陷的区域，并且具有不小于5×10 8个/ SUP>氧沉淀结晶缺陷/ cm 3。 制造衬底的方法包括以下步骤：使用通过Czochralski法生长的硅单晶或使用含有不少于5×10 17个原子的熔融硅的磁场施加的Czochralski法衍生硅半导体衬底 并且不超过1.5×10 19个氮原子/ cm 3，并且在非氧化性气氛中在不低于最高最终温度的条件下热处理硅半导体衬底 1150℃不少于1小时。

公开(公告)号：US07204887B2

公开(公告)日：2007-04-17

申请号：US10149939

申请日：2001-10-16

申请人： Keisuke Kawamura ,  Tsutomu Sasaki ,  Atsuki Matsumura ,  Atsushi Ikari ,  Isao Hamaguchi ,  Yoshiharu Inoue ,  Koki Tanaka ,  Shunichi Hayashi

发明人： Keisuke Kawamura ,  Tsutomu Sasaki ,  Atsuki Matsumura ,  Atsushi Ikari ,  Isao Hamaguchi ,  Yoshiharu Inoue ,  Koki Tanaka ,  Shunichi Hayashi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  H01L21/67309 ,  H01L21/6875 ,  Y10S206/832

摘要： The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.

摘要翻译： 本发明提供一种能够在硅晶片的高温热处理中不降低生产率和低成本地充分抑制滑移位错的晶片保持器，晶片支撑构件，晶片舟皿和热处理炉，以及 所述晶片保持器的特征在于：晶片保持器由晶片支撑板和安装在所述晶片支撑板上的三个或更多个晶片支撑构件组成，每个晶片支撑构件具有晶片支撑部分或更多个; 所述晶片支撑构件中的至少一个是倾斜晶片支撑构件，其在上表面上具有多个向上凸起的晶片支撑部分并且可相对于所述晶片支撑板倾斜; 并且晶片由至少四个晶片支撑部分支撑。

公开(公告)号：US6080237A

公开(公告)日：2000-06-27

申请号：US93179

申请日：1998-06-08

申请人： Toshio Iwasaki ,  Shin-ichi Fujimoto ,  Hiroshi Isomura ,  Takayoshi Ishida ,  Michiharu Tamura ,  Atsushi Ikari

发明人： Toshio Iwasaki ,  Shin-ichi Fujimoto ,  Hiroshi Isomura ,  Takayoshi Ishida ,  Michiharu Tamura ,  Atsushi Ikari

IPC分类号： C30B15/00 ,  C30B15/36 ,  C30B29/06 ,  H01L21/208 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/36

摘要： This invention is directed to a method for the production of a dislocation-free silicon single crystal by the Czochralski method. This method attains growth of the main body part of the dislocation-free silicon single crystal by immersing a seed crystal in a melt of silicon and then pulling the seed crystal without recourse to the necking. The seed crystal thus used is a dislocation-free silicon single crystal. The horizontal maximum length of the part of the seed crystal being immersed in the melt at the time of completing the immersion of the seed crystal in the melt is not less than 5 mm. The immersing rate of the seed crystal in the melt is not more than 2.8 mm/min and the part of the seed crystal to be immersed in the melt is a crystal as grown.

摘要翻译： 本发明涉及一种通过Czochralski法生产无位错硅单晶的方法。 该方法通过将晶种浸入硅熔体中然后拉动籽晶而不求助于颈缩，从而实现了无位错硅单晶的主体部分的生长。 这样使用的晶种是无位错硅单晶。 在将晶种浸入熔体中浸入熔融物中的晶种部分的水平最大长度不小于5mm。 晶种在熔体中的浸入速率不超过2.8mm / min，浸入熔体中的晶种的一部分是生长晶体。