发明授权
US5684818A Stepped substrate semiconductor laser for emitting light at slant portion
失效
用于在倾斜部分发射光的步进衬底半导体激光器
- 专利标题： Stepped substrate semiconductor laser for emitting light at slant portion
- 专利标题（中）： 用于在倾斜部分发射光的步进衬底半导体激光器
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申请号： US339213申请日： 1994-11-10
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公开(公告)号： US5684818A公开(公告)日： 1997-11-04
- 发明人: Chikashi Anayama , Takehiro Fukushima , Akira Furuya
- 申请人： Chikashi Anayama , Takehiro Fukushima , Akira Furuya
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-337541 19931228; JPX5-337542 19931228; JPX6-048871 19940318
- 主分类号： H01S5/223
- IPC分类号： H01S5/223 ; H01S5/30 ; H01S5/32 ; H01S5/343 ; H01S3/19
摘要：
In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer at the slant portion is set to 2.5 .mu.m or less or the angle between the flat portion and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field.
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