The cell density of a trenched DMOS transistor is increased by overcoming the problem of lateral diffusion of deep P+body regions. This problem is solved in three versions. In a first version, the deep P+body region is formed using a high energy implant into a single epitaxial layer. In a second version, a double epitaxial layer is used with a somewhat lower but still high energy deep P+body implant. In a third version, there is no deep P+body implant but only the double epitaxial layer is used. The cell density is improved to more than 12 million cells per square inch in each of the three versions.