发明授权
- 专利标题： Semiconductor device and fabrication method
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US280935申请日： 1994-07-27
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公开(公告)号： US5689136A公开(公告)日： 1997-11-18
- 发明人: Mitsuo Usami , Takashi Tase
- 申请人： Mitsuo Usami , Takashi Tase
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-193267 19930804
- 主分类号： H01L25/00
- IPC分类号： H01L25/00 ; G06K19/077 ; H01L21/60 ; H01L21/68 ; H01L21/70 ; H01L21/84 ; H01L23/00 ; H01L23/498 ; H01L23/538 ; H01L23/02 ; G06K19/06 ; H05K1/14
摘要：
A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semiconductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.
公开/授权文献
- US6038991A Seat for use on an inner tube 公开/授权日：2000-03-21
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