公开(公告)号：US06486541B2

公开(公告)日：2002-11-26

申请号：US09953913

申请日：2001-09-18

申请人： Mitsuo Usami ,  Takashi Tase

发明人： Mitsuo Usami ,  Takashi Tase

IPC分类号： H01L2302

CPC分类号： G06K19/07728 ,  G06K19/077 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/49855 ,  H01L23/5388 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/05599

摘要： A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semi-conductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the of substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.

摘要翻译： 公开了至少包括半导体元件和布线的薄膜半导体器件。 在半导体元件的下表面上形成保护性绝缘材料的薄膜，并且在薄膜的下表面上接合基板。 还公开了一种用于制造薄膜半导体器件的方法，其中在绝缘体上硅晶片上形成薄膜半导体电路，在硅绝缘体晶片的背面上的硅衬底 被蚀刻掉，形成薄膜半导体芯片并将其附着于基板，并且通过印刷使薄膜半导体芯片和基板彼此连接。

公开(公告)号：US06291877B1

公开(公告)日：2001-09-18

申请号：US09542296

申请日：2000-04-04

申请人： Mitsuo Usami ,  Takashi Tase

发明人： Mitsuo Usami ,  Takashi Tase

IPC分类号： H01L2302

CPC分类号： G06K19/07728 ,  G06K19/077 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/49855 ,  H01L23/5388 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/05599

摘要： A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semiconductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the substrate, and the thin-film semi conductor chip and the substrate are wired to each other by printing.

摘要翻译： 公开了至少包括半导体元件和布线的薄膜半导体器件。 在半导体元件的下表面上形成保护性绝缘材料的薄膜，并且在薄膜的下表面上接合基板。 还公开了一种制造薄膜半导体器件的方法，其中在绝缘体上硅晶片上形成薄膜半导体电路，蚀刻绝缘体上硅晶片背面的硅衬底 关闭，形成薄膜半导体芯片并将其附着到基板上，并且通过印刷将薄膜半导体芯片和基板彼此布线。

公开(公告)号：US6051877A

公开(公告)日：2000-04-18

申请号：US888123

申请日：1997-07-03

申请人： Mitsuo Usami ,  Takashi Tase

发明人： Mitsuo Usami ,  Takashi Tase

IPC分类号： H01L25/00 ,  G06K19/077 ,  H01L21/60 ,  H01L21/68 ,  H01L21/70 ,  H01L21/84 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/02 ,  G06K19/00 ,  H05K1/14

CPC分类号： G06K19/07728 ,  G06K19/077 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/49855 ,  H01L23/5388 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/24 ,  H01L24/82 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/3511

摘要： A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semiconductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.

公开(公告)号：US5689136A

公开(公告)日：1997-11-18

申请号：US280935

申请日：1994-07-27

申请人： Mitsuo Usami ,  Takashi Tase

发明人： Mitsuo Usami ,  Takashi Tase

IPC分类号： H01L25/00 ,  G06K19/077 ,  H01L21/60 ,  H01L21/68 ,  H01L21/70 ,  H01L21/84 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/02 ,  G06K19/06 ,  H05K1/14

CPC分类号： G06K19/07728 ,  G06K19/077 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/49855 ,  H01L23/5388 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/24 ,  H01L24/82 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/3511

摘要： A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semiconductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.

摘要翻译： 公开了至少包括半导体元件和布线的薄膜半导体器件。 在半导体元件的下表面上形成保护性绝缘材料的薄膜，并且在薄膜的下表面上接合基板。 还公开了一种制造薄膜半导体器件的方法，其中在绝缘体上硅晶片上形成薄膜半导体电路，蚀刻绝缘体上硅晶片背面的硅衬底 关闭时，形成薄膜半导体芯片并附着到基板上，并且通过印刷将薄膜半导体芯片和基板彼此布线。

公开(公告)号：US08017441B2

公开(公告)日：2011-09-13

申请号：US12303066

申请日：2006-06-02

申请人： Mitsuo Usami

发明人： Mitsuo Usami

IPC分类号： H01L21/00

CPC分类号： H01L21/56 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00

摘要： An IC tag inlet (100) is configured by: an upper side antenna (102) and a lower side antenna (103) sandwiching a semiconductor chip (101) that includes an upper electrode (132) and a lower electrode (133) from both upper and lower directions; and a support resin (104) covering the semiconductor chip (101). The semiconductor chip (101) is a micro chip having an outer size of 0.15 mm square or smaller, and a thickness of 10 μm or smaller. In a manufacturing process of the IC tag inlet (100), in order to make the handling of the semiconductor chip (101) easy, prior to a step of sandwiching the semiconductor chip (101) between the upper side antenna (102) and the lower side antenna (103), the whole surface of the semiconductor chip (101) is covered by the support resin (104), so that an effective volume is made large.

摘要翻译： IC标签入口（100）通过以下方式构成：上下侧天线（102）和下侧天线（103），其夹着半导体芯片（101），其包括来自两者的上电极（132）和下电极（133） 上下方向; 和覆盖半导体芯片（101）的支撑树脂（104）。 半导体芯片（101）是外形尺寸为0.15mm以下，厚度为10μm以下的微型芯片。 在IC标签入口（100）的制造过程中，为了使半导体芯片（101）的处理容易，在将半导体芯片（101）夹在上侧天线（102）和 下侧天线（103），半导体芯片（101）的整个表面被支撑树脂（104）覆盖，使得有效体积变大。

公开(公告)号：US07652360B2

公开(公告)日：2010-01-26

申请号：US11696028

申请日：2007-04-03

申请人： Mitsuo Usami

发明人： Mitsuo Usami

IPC分类号： H01L23/02

CPC分类号： H01L24/01 ,  G06K7/0008 ,  G06K19/02 ,  G06K19/041 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07758 ,  G06K19/07786 ,  H01L21/50 ,  H01L23/051 ,  H01L23/08 ,  H01L23/291 ,  H01L23/3107 ,  H01L23/48 ,  H01L23/4827 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/83 ,  H01L2223/6677 ,  H01L2224/274 ,  H01L2224/45124 ,  H01L2224/83801 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/16588 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/83205

摘要： An electronic device, in which a flat plate semiconductor and dumets connected to surface electrodes on the front and back surfaces of the semiconductor and to lead wires are encapsulated in a glass tube.

摘要翻译： 其中将平板半导体和连接到半导体的前表面和后表面上的表面电极的引线和引线封装在玻璃管中的电子器件。

公开(公告)号：US07629667B2

公开(公告)日：2009-12-08

申请号：US10564885

申请日：2003-08-28

申请人： Mitsuo Usami

发明人： Mitsuo Usami

IPC分类号： H01L21/8222

CPC分类号： G06K19/07749 ,  G06K19/07775 ,  G06K19/07779 ,  G06K19/07783 ,  H01L23/5227 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3011 ,  H01Q1/22 ,  H01Q1/2283 ,  H01L2224/0401

摘要： An issue of reducing a product manufacture unit cost exists in wireless IC chips which are required to be disposable because the wireless IC chips circulate in a massive scale and require a very high collection cost. It is possible to increase the communication distance of a wireless IC chip with an on-chip antenna simply contrived for reduction of the production unit cost by increasing the size of the antenna mounted on a wireless IC chip or by increasing the output power of a reader as in a conventional way. However, because of the circumstances of the applications used and the read accuracy of the reader, the antenna cannot be mounted on a very small chip in an in-chip antenna form. When an AC magnetic field is applied to an on-chip antenna from outside, eddy current is produced in principle because the semiconductor substrate is conductive. It has been fount that the thickness of the substrate can be used as a design parameter because of the eddy current. Based on this finding, according to the invention, the thickness of the substrate is decreased to reduce or eliminate the energy loss due to the eddy current to utilize the electromagnetic wave energy for the semiconductor circuit operation as originally designed. With the thickness reduction, it is possible to increase the communication distance by preventing ineffective absorption of energy and thereby increasing the current flowing through the on-chip antenna.

摘要翻译： 由于无线IC芯片大量流通并且需要非常高的收集成本，所以无线IC芯片中存在降低产品制造单位成本的问题，这些无线IC芯片需要一次性使用。 可以通过增加安装在无线IC芯片上的天线的尺寸或通过增加读取器的输出功率来简单地设计用于降低生产单元成本的片上天线的无线IC芯片的通信距离 如常规方式。 然而，由于使用的应用环境和读取器的读取精度，天线不能以片内天线形式安装在非常小的芯片上。 当从外部向片上天线施加AC磁场时，由于半导体衬底是导电的，原则上产生涡电流。 由于涡电流，衬底的厚度可以用作设计参数。 基于这一发现，根据本发明，减小或消除了由于涡电流而导致的能量损耗，以便如最初设计的那样利用电磁波能量进行半导体电路操作。 通过减小厚度，可以通过防止能量的无效吸收从而增加流过片上天线的电流来增加通信距离。

公开(公告)号：US20090191668A1

公开(公告)日：2009-07-30

申请号：US12303066

申请日：2006-06-02

申请人： Mitsuo Usami

发明人： Mitsuo Usami

IPC分类号： H01L21/50

CPC分类号： H01L21/56 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00

摘要： An IC tag inlet (100) is configured by: an upper side antenna (102) and a lower side antenna (103) sandwiching a semiconductor chip (101) that includes an upper electrode (132) and a lower electrode (133) from both upper and lower directions; and a support resin (104) covering the semiconductor chip (101). The semiconductor chip (101) is a micro chip having an outer size of 0.15 mm square or smaller, and a thickness of 10 μm or smaller. In a manufacturing process of the IC tag inlet (100), in order to make the handling of the semiconductor chip (101) easy, prior to a step of sandwiching the semiconductor chip (101) between the upper side antenna (102) and the lower side antenna (103), the whole surface of the semiconductor chip (101) is covered by the support resin (104), so that an effective volume is made large.

摘要翻译： IC标签入口（100）通过以下方式构成：上下侧天线（102）和下侧天线（103），其夹着半导体芯片（101），其包括来自两者的上电极（132）和下电极（133） 上下方向; 和覆盖半导体芯片（101）的支撑树脂（104）。 半导体芯片（101）是外形尺寸为0.15mm以下，厚度为10μm以下的微型芯片。 在IC标签入口（100）的制造过程中，为了使半导体芯片（101）的处理容易，在将半导体芯片（101）夹在上侧天线（102）和 下侧天线（103），半导体芯片（101）的整个表面被支撑树脂（104）覆盖，使得有效体积变大。

公开(公告)号：US20080074239A1

公开(公告)日：2008-03-27

申请号：US11630861

申请日：2004-08-04

申请人： Mitsuo Usami

发明人： Mitsuo Usami

IPC分类号： H04Q5/22

CPC分类号： G06K7/0008 ,  G06F11/1004 ,  H03M13/09

摘要： A reader reads electronic tag data and a CRC code from an electronic tag and detects whether the electronic tag data has been received correctly, by using the CRC code. The CRC code is generated from reader data and electronic tag data stored in the reader and an error detection is performed by using the reader data, so that the error detection is performed simultaneously, and it is possible to selectively read out only the electronic tag data from the electronic tag correlated with the reader data.

摘要翻译： 读取器从电子标签读取电子标签数据和CRC码，并通过使用CRC码来检测电子标签数据是否被正确接收。 CRC代码是从阅读器数据和存储在读取器中的电子标签数据生成的，并且通过使用读取器数据执行错误检测，从而同时执行错误检测，并且可以仅选择性地读出电子标签数据 从与读取器数据相关的电子标签。

公开(公告)号：US07298029B2

公开(公告)日：2007-11-20

申请号：US11101577

申请日：2005-04-08

申请人： Mitsuo Usami ,  Kazutaka Tsuji ,  Takeshi Saito ,  Akira Sato ,  Kenji Sameshima ,  Kazuo Takaragi ,  Chizuko Yasunobu

发明人： Mitsuo Usami ,  Kazutaka Tsuji ,  Takeshi Saito ,  Akira Sato ,  Kenji Sameshima ,  Kazuo Takaragi ,  Chizuko Yasunobu

IPC分类号： H01L23/02 ,  H01L29/40

CPC分类号： B42D25/30 ,  B42D25/29 ,  B42D2033/46 ,  D21H21/48 ,  G06K7/0008 ,  G06K19/073 ,  G06K19/07363 ,  G06K19/07372 ,  G06K19/07728 ,  G06K19/07749 ,  G06K19/07779 ,  G06K19/07783 ,  H01L21/6835 ,  H01L23/3171 ,  H01L23/49855 ,  H01L23/576 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/05001 ,  H01L2224/16 ,  H01L2224/2518 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29293 ,  H01L2224/29298 ,  H01L2224/73204 ,  H01L2224/7565 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01Q1/2208 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A non-contact identification semiconductor device is provided with a semiconductor chip including a receiving circuit that receives an inquiry to the non-contact identification semiconductor device, a memory that stores identification information of multiple bits and a sending circuit that sends the identification information. An antenna coupled to said semiconductor chip receives the identification information from said semiconductor chip and transmits the identification information outside of said non-contact semiconductor. The long side length of the semiconductor chip is not greater than 0.5 mm in plane dimension, and the identification information is stored by a pattern printed by an electron beam.

摘要翻译： 非接触式识别半导体器件设置有半导体芯片，该半导体芯片包括接收对非接触识别半导体器件的查询的接收电路，存储多个比特的识别信息的存储器和发送识别信息的发送电路。 耦合到所述半导体芯片的天线从所述半导体芯片接收所述识别信息，并将所述识别信息发送到所述非接触式半导体之外。 半导体芯片的长边长度在平面尺寸上不大于0.5mm，并且通过由电子束打印的图案来存储识别信息。