Invention Grant
- Patent Title: Method of forming micropattern
- Patent Title (中): 微图案形成方法
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Application No.: US603260Application Date: 1996-02-20
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Publication No.: US5693453APublication Date: 1997-12-02
- Inventor: Yoshiharu Muroya
- Applicant: Yoshiharu Muroya
- Applicant Address: JPX Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX7-030367 19950220
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F7/20 ; H01J37/317 ; H01S5/00 ; G03F7/22
Abstract:
A method of forming a micro dot pattern by using an electron beam exposure apparatus which sets a minimum unit moving distance of an electron beam smaller than an electron beam diameter includes the steps of defining one of lattice points formed for every minimum unit moving distance of the electron beam as a reference position, and irradiating the electron beam on at least two lattice points within an area separated from the reference position by a distance smaller than the electron beam diameter in an equal exposure amount or different exposure amounts to form a pattern having a center at an exposure peak position in a sum of the plurality of exposure amounts, thereby forming the micro dot pattern having a center at a position other than the lattice points.
Public/Granted literature
- US4576463A Developing apparatus for electrostatic photography Public/Granted day:1986-03-18
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