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公开(公告)号:US11971662B2
公开(公告)日:2024-04-30
申请号:US17083979
申请日:2020-10-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Zhichong Wang , Fuqiang Li , Peng Liu , Jing Feng , Xinglong Luan , Guangcai Yuan , Xue Dong
CPC classification number: G03F7/22 , G03F7/2051 , G03F7/70466 , G03F7/70475
Abstract: A digital exposure machine and an exposure control method thereof are disclosed. The exposure control method of the digital exposure machine includes: determining a scanning direction of the digital exposure machine, wherein a plurality of sub-pixels in an array include multiple rows of sub-pixels arranged in the scanning direction, the multiple rows of sub-pixels including a first row of sub-pixels in the scanning direction; determining a starting scanning position, the starting scanning position being located on an outer side of the first row of sub-pixels in the scanning direction; and performing a plurality of scannings to expose a display region of the first display substrate to be exposed, wherein a scanning pitch for each of the plurality of scannings is integer times of a pitch of two adjacent rows of sub-pixels of the first display substrate in the scanning direction.
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公开(公告)号:US11187999B2
公开(公告)日:2021-11-30
申请号:US16866622
申请日:2020-05-05
Applicant: NIKON CORPORATION
Inventor: Yasuo Aoki
Abstract: A movable body apparatus that moves a substrate equipped with: a substrate holder which can move in the X-axis and the Y-axis directions; a Y coarse movement stage can move in the Y-axis direction, a first measurement system acquiring position information on the substrate holder with heads provided at the substrate holder and a scale provided at the Y coarse movement stage; a second measurement system acquiring position information on the Y coarse movement stage with heads at the Y coarse movement stage and a scale; and a control system controlling the position of the substrate holder based on position information acquired by the first and the second measurement systems, and the first measurement system irradiates a measurement beam on the scale while moving the heads in the X-axis direction, and the second measurement system irradiates a measurement beam on the scale while moving the heads in the Y-axis direction.
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公开(公告)号:US11003089B2
公开(公告)日:2021-05-11
申请号:US16850285
申请日:2020-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Jun-Yih Yu , De-Fang Huang , De-Chen Tseng , Jia-Feng Chang , Li-Fang Hsu
Abstract: The present disclosure, in some embodiments, relates to a method of performing a photolithography process. The method includes forming a photosensitive material over a substantially flat upper surface of a substrate. The substantially flat upper surface of the substrate extends between opposing sides of the substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that are centered at different heights over the substrate. The photosensitive material is developed to remove a part of the photosensitive material.
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公开(公告)号:US20200341373A1
公开(公告)日:2020-10-29
申请号:US16757431
申请日:2018-10-23
Inventor: Lijiang WANG , Wei WANG , Song ZHU
IPC: G03F7/004 , C07D417/14 , G03F7/22 , G03F7/32 , G03F7/20
Abstract: This invention relates to the field of lithography and particularly to a lithographic method, a lithographic product and a lithographic material. The invention provides a lithographic method including the steps of: 1) providing first light and second light to the lithographic material, wherein at least part of molecules for generating effector molecules controllable by a molecular switch in a turned-on state generate effector molecules, thereby changing physical and/or chemical properties of the lithographic material in an area where the molecular switch is turned on; and 2) removing either the lithographic material that has changed in physical or chemical properties or the lithographic material that has not changed. The novel lithographic method provided by the invention can effectively break through the diffraction limit of light, thereby further improving lithography precision.
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公开(公告)号:US20200241427A1
公开(公告)日:2020-07-30
申请号:US16850285
申请日:2020-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Jun-Yih Yu , De-Fang Huang , De-Chen Tseng , Jia-Feng Chang , Li-Fang Hsu
Abstract: The present disclosure, in some embodiments, relates to a method of performing a photolithography process. The method includes forming a photosensitive material over a substantially flat upper surface of a substrate. The substantially flat upper surface of the substrate extends between opposing sides of the substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that are centered at different heights over the substrate. The photosensitive material is developed to remove a part of the photosensitive material.
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公开(公告)号:US10670977B2
公开(公告)日:2020-06-02
申请号:US16337272
申请日:2017-09-29
Applicant: NIKON CORPORATION
Inventor: Yasuo Aoki
Abstract: A movable body apparatus that moves a substrate equipped with: a substrate holder which can move in the X-axis and the Y-axis directions; a Y coarse movement stage can move in the Y-axis direction, a first measurement system acquiring position information on the substrate holder with heads provided at the substrate holder and a scale provided at the Y coarse movement stage; a second measurement system acquiring position information on the Y coarse movement stage with heads at the Y coarse movement stage and a scale; and a control system controlling the position of the substrate holder based on position information acquired by the first and the second measurement systems, and the first measurement system irradiates a measurement beam on the scale while moving the heads in the X-axis direction, and the second measurement system irradiates a measurement beam on the scale while moving the heads in the Y-axis direction.
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公开(公告)号:US20190384179A1
公开(公告)日:2019-12-19
申请号:US16337272
申请日:2017-09-29
Applicant: NIKON CORPORATION
Inventor: Yasuo AOKI
Abstract: A movable body apparatus that moves a substrate equipped with: a substrate holder which can move in the X-axis and the Y-axis directions; a Y coarse movement stage can move in the Y-axis direction, a first measurement system acquiring position information on the substrate holder with heads provided at the substrate holder and a scale provided at the Y coarse movement stage; a second measurement system acquiring position information on the Y coarse movement stage with heads at the Y coarse movement stage and a scale; and a control system controlling the position of the substrate holder based on position information acquired by the first and the second measurement systems, and the first measurement system irradiates a measurement beam on the scale while moving the heads in the X-axis direction, and the second measurement system irradiates a measurement beam on the scale while moving the heads in the Y-axis direction.
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公开(公告)号:US20180239263A1
公开(公告)日:2018-08-23
申请号:US15961377
申请日:2018-04-24
Applicant: ASML Netherlands B.V.
Inventor: Simon Gijsbert Josephus Mathijssen , Stefan Hunsche , Markus Gerardus Martinus Maria Van Kraaij
Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
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公开(公告)号:US09958791B2
公开(公告)日:2018-05-01
申请号:US15032507
申请日:2014-10-13
Applicant: ASML Netherlands B.V.
Inventor: Simon Gijsbert Josephus Mathijssen , Stefan Hunsche , Markus Gerardus Martinus Maria Van Kraaij
CPC classification number: G03F7/70683 , G03F7/213 , G03F7/22 , G03F7/70466 , G03F7/70616 , G03F7/70633
Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
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公开(公告)号:US09244366B2
公开(公告)日:2016-01-26
申请号:US14692199
申请日:2015-04-21
Inventor: Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
CPC classification number: G03F7/70691 , G03F1/22 , G03F7/22 , G03F7/70358 , G03F7/70558
Abstract: An extreme ultraviolet lithography (EUVL) process is performed on a target, such as a semiconductor wafer, having a photosensitive layer. The method includes providing a one-dimensional patterned mask along a first direction. The patterned mask includes a substrate including a first region and a second region, a multilayer mirror above the first and second regions, an absorption layer above the multilayer mirror in the second region, and a defect in the first region. The method further includes exposing the patterned mask by an illuminator and setting the patterned mask and the target in relative motion along the first direction while exposing the patterned mask. As a result, an accumulated exposure dose received by the target is an optimized exposure dose.
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