公开(公告)号：US20090066967A1

公开(公告)日：2009-03-12

申请号：US12230322

申请日：2008-08-27

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: G01B9/02

CPC classification number: G01B11/24

Abstract: This invention provides a method and an apparatus of measuring a micro-structure, capable of evaluating a geometry of a micro-structure formed typically on the surface of a semiconductor substrate, in a non-destructive, easy, precise and quantitative manner. A reflection spectrum of a sample having a known dimension of a target micro-geometry is measured (A1), features (waveform parameters) which strongly correlate to a dimension of the measured micro-geometry are determined (A2), a relation between the dimension of the micro-geometry and the waveform parameters is found (A3), and a dimension of the micro-structure having an unknown dimension is finally determined using this relation and based on the reflection spectrum obtained therefrom (A4, A5).

Abstract translation: 本发明提供一种测量微结构的方法和装置，其能够以非破坏性，容易，精确和定量的方式评估典型地在半导体衬底的表面上形成的微结构的几何形状。 测量具有目标微观几何的已知尺寸的样品的反射光谱（A1），确定与所测量的微观几何尺寸密切相关的特征（波形参数）（A2），尺寸之间的关系 发现微观几何形状和波形参数（A3），并且最终使用该关系确定具有未知尺寸的微结构的尺寸，并且基于由其获得的反射光谱（A4，A5）。

公开(公告)号：US5668047A

公开(公告)日：1997-09-16

申请号：US251259

申请日：1994-05-31

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: H01S5/00 ,  H01S5/12 ,  H01L21/20

CPC classification number: H01S5/12 ,  H01S5/1231 ,  Y10S148/095 ,  Y10S148/099 ,  Y10S438/948

Abstract: A method for fabricating an InP diffraction grating for a distributed feedback semiconductor laser includes the steps of applying an electron beam resist on a semiconductor substrate, giving electron beam exposure to the electron beam resist and controlling heights of resist patterns by using fixed electron beam diameters but by varying incident electron doses. The semiconductor substrate is dry-etched. The electron beam exposure is such that the incident electron doses are made larger at a center portion than at portions towards two sides of the diffraction grating. Due to the proximity effect, the resist patterns after development will have a lower height and a narrower width at portions at which the incident electron doses are increased and, conversely, a higher height and a wider width at portions at which the incident electron doses are decreased. In a method of fabricating a distributed feedback laser using a substrate of the InP diffraction grating fabricated as above, the method includes the step of sequentially growing on the substrate a waveguide layer, an active layer and a cladding layer. The method enables to fabricate a low distortion distributed feedback laser for analog modulation having non-uniform diffraction gratings.

Abstract translation: 制造用于分布式反馈半导体激光器的InP衍射光栅的方法包括以下步骤：在半导体衬底上施加电子束抗蚀剂，使电子束暴露于电子束抗蚀剂并通过使用固定的电子束直径控制抗蚀剂图案的高度，但是 通过改变入射电子剂量。 干式蚀刻半导体衬底。 电子束曝光使得入射电子剂量在中心部分比在衍射光栅两侧的部分处更大。 由于邻近效应，显影后的抗蚀剂图案在入射电子剂量增加的部分处将具有较低的高度和较窄的宽度，相反地，在入射电子剂量的部分处具有较高的高度和较宽的宽度 减少。 在使用如上制造的InP衍射光栅的衬底制造分布反馈激光的方法中，该方法包括在衬底上顺序生长在波导层，有源层和包覆层上的步骤。 该方法能够制造具有不均匀衍射光栅的模拟调制的低失真分布反馈激光器。

公开(公告)号：US07580134B2

公开(公告)日：2009-08-25

申请号：US12230322

申请日：2008-08-27

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: G01B9/02

CPC classification number: G01B11/24

Abstract: This invention provides a method and an apparatus of measuring a micro-structure, capable of evaluating a geometry of a micro-structure formed typically on the surface of a semiconductor substrate, in a non-destructive, easy, precise and quantitative manner. A reflection spectrum of a sample having a known dimension of a target micro-geometry is measured (A1), features (waveform parameters) which strongly correlate to a dimension of the measured micro-geometry are determined (A2), a relation between the dimension of the micro-geometry and the waveform parameters is found (A3), and a dimension of the micro-structure having an unknown dimension is finally determined using this relation and based on the reflection spectrum obtained therefrom (A4, A5).

公开(公告)号：US5693453A

公开(公告)日：1997-12-02

申请号：US603260

申请日：1996-02-20

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  H01S5/00 ,  G03F7/22

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/3174 ,  Y10S430/143

Abstract: A method of forming a micro dot pattern by using an electron beam exposure apparatus which sets a minimum unit moving distance of an electron beam smaller than an electron beam diameter includes the steps of defining one of lattice points formed for every minimum unit moving distance of the electron beam as a reference position, and irradiating the electron beam on at least two lattice points within an area separated from the reference position by a distance smaller than the electron beam diameter in an equal exposure amount or different exposure amounts to form a pattern having a center at an exposure peak position in a sum of the plurality of exposure amounts, thereby forming the micro dot pattern having a center at a position other than the lattice points.

Abstract translation: 通过使用设定小于电子束直径的电子束的最小单位移动距离的电子束曝光装置形成微点图案的方法包括以下步骤：为每个最小单位移动距离形成一个格点， 电子束作为参考位置，并且将电子束照射在与参考位置分开的区域内的至少两个格子点处，该距离小于电子束直径，其曝光量相等或不同，以形成具有 在多个曝光量的和中的曝光峰值位置处中心，从而形成具有除了格点之外的位置的中心的微点图案。

公开(公告)号：US20050219548A1

公开(公告)日：2005-10-06

申请号：US11087673

申请日：2005-03-24

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: G01B11/02 ,  G01B9/02 ,  G01B11/24 ,  H01L21/66

CPC classification number: G01B11/24

Abstract: This invention provides a method and an apparatus of measuring a micro-structure, capable of evaluating a geometry of a micro-structure formed typically on the surface of a semiconductor substrate, in a non-destructive, easy, precise and quantitative manner. A reflection spectrum of a sample having a known dimension of a target micro-geometry is measured (A1), features (waveform parameters) which strongly correlate to a dimension of the measured micro-geometry are determined (A2), a relation between the dimension of the micro-geometry and the waveform parameters is found (A3), and a dimension of the micro-structure having an unknown dimension is finally determined using this relation and based on the reflection spectrum obtained therefrom (A4, A5).

Abstract translation: 本发明提供一种测量微结构的方法和装置，其能够以非破坏性，容易，精确和定量的方式评估典型地在半导体衬底的表面上形成的微结构的几何形状。 测量具有目标微观几何的已知尺寸的样品的反射光谱（A 1），确定与测量的微几何尺寸强相关的特征（波形参数）（A 2），与 发现微观几何尺寸和波形参数（A 3），并且使用该关系最终确定具有未知尺寸的微结构的尺寸，并且基于由其获得的反射光谱（A 4，A 5 ）。

公开(公告)号：US06577660B1

公开(公告)日：2003-06-10

申请号：US09621690

申请日：2000-07-21

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: H01S3085

CPC classification number: H01S5/12 ,  B82Y20/00 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/1206 ,  H01S5/1225 ,  H01S5/1231 ,  H01S5/124 ,  H01S5/3434

Abstract: In a distributed feedback type semiconductor laser device having a waveguide structure for outputting a signal light from a front side of the waveguide structure and a monitoring light from a rear side of the waveguide structure, an active layer is formed above a semiconductor substrate, and an optical guide layer having a diffraction grating is provided. A coupling coefficient of the waveguide structure is gradually increased from the front side of the waveguide structure to the rear side of the waveguide structure.

Abstract translation: 在具有用于输出来自波导结构的前侧的信号光和波导结构的后侧的监视光的波导结构的分布式反馈型半导体激光装置中，在半导体基板的上方形成有源层， 提供具有衍射光栅的光导层。 波导结构的耦合系数从波导结构的前侧逐渐增加到波导结构的后侧。

公开(公告)号：US06495384B1

公开(公告)日：2002-12-17

申请号：US09428791

申请日：1999-10-28

Applicant: Takao Morimoto ,  Yoshiharu Muroya

Inventor： Takao Morimoto ,  Yoshiharu Muroya

IPC: H01L2127

CPC classification number: H01S5/12 ,  H01S5/1225 ,  H01S5/1231

Abstract: In exposing a diffraction grating pattern on a resist, the diffraction grating pattern is exposed via EB on an active region and the adjacent thereto only and the region which is not exposed via EB is exposed via Deep UV light so that the resist may be left on the active region and the adjacent thereto only after the exposed resist is developed according to the process of forming a diffraction grating for a distributed feedback semiconductor laser of the present invention. In addition, the resist-coated area can be gradually reduced from the resist existing area to the non-resist existing area and the average height of the substrate on which said diffraction grating is formed can be gradually changed on the diffraction grating forming region and non-diffraction grating forming region which results in preventing the crystallinity of a semiconductor layer on the substrate from being deteriorated. This enables formation of an excellent crystallinity semiconductor layer on the substrate on which the diffraction grating is locally formed.

Abstract translation: 在抗蚀剂上曝光衍射光栅图案时，衍射光栅图案通过EB在有源区域和仅与其相邻的区域上曝光，未通过EB曝光的区域通过深紫外光曝光，使得抗蚀剂可以保留 根据本发明的分布式反馈半导体激光器的衍射光栅的形成工序，在曝光后的抗蚀剂显影之后，有源区域及其相邻区域。 此外，抗蚀剂涂布面积可以从抗蚀剂存在区域逐渐减小到非抗蚀剂存在区域，并且在其上形成所述衍射光栅的基板的平均高度可以在衍射光栅形成区域上逐渐变化， 导致防止基板上的半导体层的结晶性劣化的衍射光栅形成区域。 这使得能够在其上局部形成衍射光栅的基板上形成优异的结晶性半导体层。

公开(公告)号：US6111906A

公开(公告)日：2000-08-29

申请号：US39561

申请日：1998-03-16

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: H01S5/00 ,  H01S5/12 ,  H01S3/08

CPC classification number: H01S5/12 ,  H01S5/1215 ,  H01S5/1243

Abstract: A stable single-mode oscillation semiconductor laser is obtained by flattening the distribution of electric field intensity in the direction of the resonator axis, and to provide a distributed-feedback semiconductor laser generator having a more satisfactory difference in threshold gain between the principal and subsidiary modes. The laser includes an active layer which radiates light as a result of the injection of electrons, a light guide layer which is next to this active layer guides light emitted from the active layer, a plurality of semiconductor layers between which the active layer and light guide layer are interposed, electrodes which permit electrons to be injected from these semiconductor layers into the active layer, a non-reflective coating provided on both ends of the active layer in the direction of oscillation, and a diffraction grating which is provided on the light guide layer for selecting the oscillatory wavelength of the light. The diffraction grating has a plurality of uniform pitch areas formed with a uniform and equal pitch, and a varying pitch area interposed between the uniform pitch areas and having a plurality of pitches longer and shorter than those of these uniform pitch areas, the latter serving to select the oscillatory wavelength of the light, where the absolute value of the sum-total of the amount of phase change in the varying pitch area (cumulative amount of phase change) in relation to the phase in the uniform pitch areas is between 3/2 and 11/2 times the pitch of the diffraction grating of the uniform pitch areas.

Abstract translation: 通过在谐振器轴的方向上平坦化电场强度的分布来获得稳定的单模式振荡半导体激光器，并且提供在主模式和辅助模式之间具有更令人满意的阈值增益差的分布反馈半导体激光发生器 。 激光器包括由于注入电子而散发光的有源层，与该有源层相邻的导光层引导从有源层发射的光，多个半导体层，有源层和导光体 插入电极，允许电子从这些半导体层注入到有源层中，在有源层的两端在振荡方向上设置的非反射涂层以及设置在光导体上的衍射光栅 用于选择光的振荡波长的层。 衍射光栅具有形成均匀等间距的多个均匀的间距区域，以及介于均匀间距区域之间的变化的间距区域，并且具有比这些均匀间距区域更长和更短的多个间距，后者用于 选择光的振荡波长，其中相对于均匀间距区域中的相位，变化间距区域（相变的累积量）中的相位变化量的总和的绝对值在3 / 和均匀间距区域的衍射光栅的间距的11/2倍。