发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US623941申请日： 1996-03-29
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公开(公告)号： US5696401A公开(公告)日： 1997-12-09
- 发明人: Tomohisa Mizuno , Yoshiaki Asao
- 申请人： Tomohisa Mizuno , Yoshiaki Asao
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX3-118963 19910524
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/10 ; H01L29/739 ; H01L29/76 ; H01L31/062 ; H01L31/113 ; H01L29/54
摘要：
An MOSFET has the essential feature lying in that the depths of well regions are different between a channel region and a diffusion region under a gate electrode to suppress charges in depletion layers. The MOSFET comprises a first well region which is formed in the channel region of a substrate below a gate electrode, and has a PN junction shallower than the sum of the width of a channel depletion layer formed by a voltage applied to the gate electrode and the width of a depletion layer formed by a substrate voltage of the substrate, and a second well region which is formed in source and drain regions to extend to the first well region, and has a PN junction deeper than the sum of the width of a depletion layer formed in the source or drain region and the width of a depletion layer formed in the first well region by the substrate voltage of the substrate.
公开/授权文献
- US4040614A Separator device 公开/授权日：1977-08-09
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