发明授权
- 专利标题： Data read circuit of a memory
- 专利标题（中）： 存储器的数据读取电路
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申请号： US724886申请日： 1996-10-03
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公开(公告)号： US5708607A公开(公告)日： 1998-01-13
- 发明人: Sang Hyun Lee , Ha Min Sung
- 申请人： Sang Hyun Lee , Ha Min Sung
- 申请人地址： KRX Chungcheongbuk-Do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-Do
- 优先权： KRX46858/1995 19951205
- 主分类号： G11C11/417
- IPC分类号： G11C11/417 ; G11C7/10 ; G11C11/407 ; G11C11/409 ; H03F3/45 ; G11C7/00
摘要：
A data read circuit of a memory includes an inverting unit, a precharging unit, a first amplifying unit, a second amplifying unit, and an output buffer unit. The inverting unit inverts data from a sense amplifier, and the precharging unit precharges a data bus line to Vcc/2. The first amplifying unit receives and amplifies the inverted data, and the second amplifying unit is commonly connected to an input terminal of the first amplifying unit to receive and amplify the signal output from the inverting unit. The output buffer unit receives, inverts and outputs the signal amplified by the first and second amplifying units.
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