发明授权
- 专利标题: Surface analyzing method and its apparatus
- 专利标题(中): 表面分析方法及其装置
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申请号: US542562申请日: 1995-10-13
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公开(公告)号: US5714757A公开(公告)日: 1998-02-03
- 发明人: Naoshi Itabashi , Kozo Mochiji , Hiroyasu Shichi , Seiji Yamamoto , Satoshi Osabe , Keiichi Kanehori
- 申请人: Naoshi Itabashi , Kozo Mochiji , Hiroyasu Shichi , Seiji Yamamoto , Satoshi Osabe , Keiichi Kanehori
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-249070 19941014
- 主分类号: G01N23/225
- IPC分类号: G01N23/225 ; G01Q90/00 ; H01J37/252 ; H01J37/08
摘要:
A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method. Since the ions irradiated on the sample surface are multiply-charged ions having a lower kinetic energy than that of threshold of sputtering of materials constituting a sample, the irradiated ions interact merely with the top surface layer of the sample whereby analyzed information merely from the top surface layer of the sample can be obtained, and as a result, the kind of atoms of the top surface layer of the sample and the bonding state of said atoms can be analyzed with high sensitivity and high resolution.
公开/授权文献
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