公开(公告)号：US5714757A

公开(公告)日：1998-02-03

申请号：US542562

申请日：1995-10-13

申请人： Naoshi Itabashi ,  Kozo Mochiji ,  Hiroyasu Shichi ,  Seiji Yamamoto ,  Satoshi Osabe ,  Keiichi Kanehori

发明人： Naoshi Itabashi ,  Kozo Mochiji ,  Hiroyasu Shichi ,  Seiji Yamamoto ,  Satoshi Osabe ,  Keiichi Kanehori

IPC分类号： G01N23/225 ,  G01Q90/00 ,  H01J37/252 ,  H01J37/08

CPC分类号： G01N23/2255 ,  H01J37/252 ,  H01J2237/04756

摘要： A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method. Since the ions irradiated on the sample surface are multiply-charged ions having a lower kinetic energy than that of threshold of sputtering of materials constituting a sample, the irradiated ions interact merely with the top surface layer of the sample whereby analyzed information merely from the top surface layer of the sample can be obtained, and as a result, the kind of atoms of the top surface layer of the sample and the bonding state of said atoms can be analyzed with high sensitivity and high resolution.

摘要翻译： 一种表面分析方法，包括用于产生特定离子种类的多电荷离子和特定电荷状态的离子产生步骤; 减速步骤，用于将产生的多电荷离子减速到比目标材料的溅射阈值的能量更低的动能; 照射步骤，用于在样品的表面上照射减速的多电荷离子; 以及分析步骤，用于通过照射所述多电荷离子来分析从所述样品的表面发射的颗粒或光。 提供了用于执行该方法的装置。 由于照射在样品表面上的离子是具有比构成样品的材料的溅射阈值低的动能的多电荷离子，因此照射的离子仅与样品的顶表面层相互作用，从而仅从顶部分析信息 可以获得样品的表面层，结果，可以以高灵敏度和高分辨率分析样品的顶表面层的原子的种类和所述原子的键合状态。

公开(公告)号：US5527731A

公开(公告)日：1996-06-18

申请号：US149941

申请日：1993-11-10

申请人： Seiji Yamamoto ,  Kozo Mochiji

发明人： Seiji Yamamoto ,  Kozo Mochiji

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/48 ,  H01J37/32 ,  H01L21/285 ,  H01L21/306 ,  H01L21/203

CPC分类号： C23C16/4551 ,  C23C16/452 ,  C23C16/483 ,  H01J37/32 ,  H01J37/32422 ,  H01L21/28512 ,  H01L21/30621 ,  H01J2237/0812

摘要： A surface treating method of the invention comprises the steps of generating mixed chemical species containing an intended chemical species of ions necessary for surface treatment by ionization of a gas, selectively trapping the intended chemical species from the mixed chemical species, exciting the intended chemical species to predetermined vibrational and electronic states, extracting the excited chemical species from a position where trapped, and subjecting the extracted chemical species to surface treatment on a surface of an article to be treated. In this method, the intended chemical species of ions which are under vibrational and electronic conditions effective for the surface treatment and have a certain mass number have been once trapped at a given position. The trapped ions are uniformly arranged with respect to their translational velocity and applied to a sample surface. Thus, dry etching with high anisotropy and high selectivity to material and deposition with good uniformity can be realized.

摘要翻译： 本发明的表面处理方法包括以下步骤：产生混合化学物质，其含有通过电离电离进行表面处理所必需的离子化学物质种类，选择性地捕集来自混合化学物质的预期化学物质，将预期化学物质激发至 预定的振动和电子状态，从被捕获的位置提取被激发的化学物质，并对所提取的化学物质在待处理物品的表面进行表面处理。 在这种方法中，在有效用于表面处理并且具有一定质量数量的振动和电子条件下的目标化学物质种类一度被捕获在给定位置。 捕获的离子相对于其平移速度均匀地排列并施加到样品表面。 因此，可以实现具有高各向异性的干蚀刻和具有高均匀性的材料和沉积的高选择性。

公开(公告)号：US5372916A

公开(公告)日：1994-12-13

申请号：US909309

申请日：1992-07-06

申请人： Taro Ogawa ,  Kozo Mochiji ,  Seiichi Murayama ,  Hiroaki Oizumi ,  Takashi Soga ,  Seiji Yamamoto ,  Isao Ochiai

发明人： Taro Ogawa ,  Kozo Mochiji ,  Seiichi Murayama ,  Hiroaki Oizumi ,  Takashi Soga ,  Seiji Yamamoto ,  Isao Ochiai

IPC分类号： G03F1/22 ,  G03F1/26 ,  G03F7/20 ,  G03C5/00

CPC分类号： G03F7/70583 ,  G03F1/22 ,  G03F1/26 ,  G03F7/2039 ,  G03F7/70283 ,  G03F7/7035

摘要： In an X-ray exposure method, consideration was made to application of a concept of a phase shift method which is used for a light exposure method, in order to improve the resolution. As a result, phase shift layers made of a material having an appropriate refractivity are provided on side walls of an absorbing pattern of an X-ray mask to improve the resolution by an interference effect. One or more layers made of a material having a refractivity different from that of the absorbing pattern are formed on the side walls of the absorbing pattern of the X-ray mask.

摘要翻译： 在X射线曝光方法中，为了提高分辨率，考虑了应用用于曝光方法的相移方法的概念。 结果，由具有适当折射率的材料制成的相移层设置在X射线掩模的吸收图案的侧壁上，以通过干涉效应提高分辨率。 在X射线掩模的吸收图案的侧壁上形成由具有与吸收图案的折射率不同的折射率的材料制成的一层或多层。

公开(公告)号：US5177773A

公开(公告)日：1993-01-05

申请号：US674406

申请日：1991-03-25

申请人： Hiroaki Oizumi ,  Kozo Mochiji ,  Shimpei Iijima

发明人： Hiroaki Oizumi ,  Kozo Mochiji ,  Shimpei Iijima

IPC分类号： G03F1/22

CPC分类号： G03F1/22

摘要： An X-ray mask comprises an absorber pattern composed of a material capable of absorbing X-ray, a mask substrate for supporting the absorber pattern, composed of a material capable of transmitting X-ray, and a support frame for supporting the mask substrate, wherein the mask substrate is composed of a mask substrate material whose impurity content is suppressed to reduce positional distortions generated by X-ray radiation. Generation of positional distortions by X-ray exposure is inhibited and an arrangement of mask pattern can be ensured with a high precision.

摘要翻译： X射线掩模包括由能够吸收X射线的材料构成的吸收体图案，由能够透射X射线的材料构成的用于支撑吸收体图案的掩模基板和支撑掩模基板的支撑框架， 其特征在于，所述掩模基板由掩模基板材料构成，所述掩模基板材料的杂质含量被抑制以减少由X射线辐射产生的位置变形。 通过X射线曝光产生位置失真，可以高精度地确保掩模图案的配置。

公开(公告)号：US5485497A

公开(公告)日：1996-01-16

申请号：US195047

申请日：1994-02-14

申请人： Hiroaki Oizumi ,  Masaaki Ito ,  Takashi Soga ,  Taro Ogawa ,  Kozo Mochiji ,  Eiji Takeda

发明人： Hiroaki Oizumi ,  Masaaki Ito ,  Takashi Soga ,  Taro Ogawa ,  Kozo Mochiji ,  Eiji Takeda

IPC分类号： G03F7/20 ,  G21K1/06 ,  G21K5/00

CPC分类号： G03F7/70058 ,  G03F7/708 ,  G21K1/06

摘要： An optical element which allows replication of a refined pattern and a projection exposure apparatus employing the optical element are disposed so that side face portions of predetermined patterns which create shadows from oblique incident exposure radiation may be minimized at a predetermined incidence angle of vacuum ultrasonic radiation or X-radiation, or the patterns of the optical element are formed such that the direction in which incident radiation is reflected regularly and the direction of side faces of the patterns may extend in parallel to each other. When the optical element is irradiated to replicate or image the patterns of the optical element, refined patterns can be replicated or imaged.

摘要翻译： 允许复制精细图案的光学元件和采用光学元件的投影曝光装置被布置成使得可以在预定的真空超声波辐射入射角度使得从倾斜入射曝光辐射产生阴影的预定图案的侧面部分最小化， X射线或光学元件的图案形成为使得入射辐射有规律地反射的方向和图案的侧面的方向可以彼此平行地延伸。 当照射光学元件以复制或成像光学元件的图案时，可以复制或成像精细图案。

公开(公告)号：US4719161A

公开(公告)日：1988-01-12

申请号：US893780

申请日：1986-08-06

申请人： Takeshi Kimura ,  Kozo Mochiji ,  Hiroshi Okamoto ,  Takao Iwayanagi ,  Tetsuichi Kudo ,  Shinji Kuniyoshi

发明人： Takeshi Kimura ,  Kozo Mochiji ,  Hiroshi Okamoto ,  Takao Iwayanagi ,  Tetsuichi Kudo ,  Shinji Kuniyoshi

IPC分类号： G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/22 ,  Y10S430/143 ,  Y10S430/148 ,  Y10S430/167

摘要： There is disclosed a mask for X-ray lithography wherein a peroxopolytungsten compound is used as an absorber, and a process for producing the same. Since this compound has a sensitivity for electron beams and light and serves as an absorber for X-rays, a mask for X-ray lithorgraphy is made only by applying this compound to a substrate, exposing the same to light to form a transferred pattern, and effecting development. Thus, the step of etching the absorber which is essential in the conventional process, is not needed. Therefore, masks having a highly accurate pattern and few defects can be produced with a high production yield.

摘要翻译： 公开了一种用于X射线光刻的掩模，其中使用过氧多钨化合物作为吸收剂及其制备方法。 由于该化合物对于电子束和光具有灵敏度并且用作X射线的吸收体，所以仅通过将该化合物施加到基底上而将其曝光以形成转印图案来进行X射线透视掩模， 并实现发展。 因此，不需要在常规方法中蚀刻吸收体的步骤。 因此，可以以高的产率获得具有高精度图案和少量缺陷的掩模。

公开(公告)号：US4599737A

公开(公告)日：1986-07-08

申请号：US529710

申请日：1983-09-06

申请人： Takeshi Kimura ,  Hidehito Obayashi ,  Kozo Mochiji

发明人： Takeshi Kimura ,  Hidehito Obayashi ,  Kozo Mochiji

IPC分类号： G03F1/00 ,  G03F1/22 ,  G03F1/68 ,  H01L21/027 ,  G21K5/00

CPC分类号： G03F1/22

摘要： An X-ray mask having a mask pattern formed from nickel or a material having nickel as a principal component supported on a thin membrane. The X-ray mask has characteristics substantially equal to those of the conventional X-ray mask employing Au as a mask pattern and is much lower in price than the Au-containing mask pattern. In addition, since the X-ray mask can easily be formed by electroless plating, it is possible to form a mask pattern with a higher accuracy than that in case of employing Au alone.

摘要翻译： 具有由镍形成的掩模图案的X射线掩模或者以镍为主要成分的材料负载在薄膜上。 X射线掩模具有与使用Au作为掩模图案的常规X射线掩模的特征基本相同的特征，并且价格低于含Au掩模图案。 此外，由于可以容易地通过无电镀形成X射线掩模，因此可以形成比仅使用Au的情况更高的精度的掩模图案。

公开(公告)号：US4315984A

公开(公告)日：1982-02-16

申请号：US176799

申请日：1980-08-11

申请人： Shinji Okazaki ,  Kozo Mochiji ,  Susumu Takahashi ,  Fumio Murai

发明人： Shinji Okazaki ,  Kozo Mochiji ,  Susumu Takahashi ,  Fumio Murai

IPC分类号： H01L21/3213 ,  G03F7/26 ,  H01L21/027 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06

CPC分类号： H01L21/7688 ,  H01L21/0272 ,  Y10S438/95 ,  Y10S438/951

摘要： That region of a resist film in which a contact is to be formed and that region thereof in which an interconnection is to be formed are respectively irradiated with an electron beam in a dose substantially equal to an optimum dose of the resist film and in a dose less than the optimum dose. Thereafter, the resist film is developed.By performing dry etching, an opening extending to a substrate is provided in the region in which the contact is to be formed, and the surface of an insulating film overlying the substrate is exposed in the region in which the interconnection is to be formed.After depositing a conductive metal film on the whole surface the remaining resist film is removed together with the metal film deposited thereon, whereby the contact and the interconnection are formed.

摘要翻译： 要形成接触的抗蚀剂膜的区域和要形成互连的区域分别以基本上等于抗蚀剂膜的最佳剂量的剂量的电子束和剂量 小于最佳剂量。 之后，形成抗蚀膜。 通过进行干蚀刻，在要形成接触的区域中设置延伸到基板的开口，并且覆盖基板的绝缘膜的表面在要形成互连的区域中露出。 在整个表面上沉积导电金属膜之后，剩余的抗蚀剂膜与沉积在其上的金属膜一起被去除，从而形成接触和互连。

公开(公告)号：US4981771A

公开(公告)日：1991-01-01

申请号：US309026

申请日：1989-02-07

申请人： Kozo Mochiji ,  Yasunari Soda ,  Takeshi Kimura

发明人： Kozo Mochiji ,  Yasunari Soda ,  Takeshi Kimura

IPC分类号： G03F1/22 ,  G03F7/20

CPC分类号： G03F1/22 ,  G03F7/2061 ,  Y10S430/168

摘要： When a pattern is to be fabricated by a lithography using radiation on a heavy metal layer formed on a substrate, secondary electrons are generated in a diverging form from the heavy metal layer by irradiation with a radioactive ray to expose the resist. As a result, the accuracy of the pattern to be formed on the resist is reduced. In order to prevent this, a layer to be transferred, a substrate to be worked, a mask and so on are formed with a film capable of absorbing the secondary electrons so that secondary electrons generated from the heavy metal layer may not reach the resist film. Although a pattern having a thickness of 2 microns or less could not be fabricated according to the prior art, a pattern as thin as 1.5 microns can be fabricated by the method of the present invention.

摘要翻译： 当通过使用在衬底上形成的重金属层上的辐射进行光刻来制造图案时，通过用放射线照射而从重金属层以分散的形式产生二次电子以暴露抗蚀剂。 结果，降低了在抗蚀剂上形成的图案的精度。 为了防止这种情况，可以用能够吸收二次电子的膜形成待转移层，待加工基板，掩模等，使得从重金属层产生的二次电子可能不到达抗蚀剂膜 。 虽然根据现有技术不能制造2微米或更小的厚度的图案，但是可以通过本发明的方法制造薄至1.5微米的图案。

公开(公告)号：US4403151A

公开(公告)日：1983-09-06

申请号：US250217

申请日：1981-04-02

申请人： Kozo Mochiji ,  Yozi Maruyama ,  Shinji Okazaki ,  Fumio Murai

发明人： Kozo Mochiji ,  Yozi Maruyama ,  Shinji Okazaki ,  Fumio Murai

IPC分类号： G03F7/039 ,  G03F7/20 ,  H05K3/00 ,  H05K3/06

CPC分类号： G03F7/7045 ,  G03F7/039 ,  G03F7/2022 ,  H05K3/0082 ,  H05K3/064 ,  Y10S430/143

摘要： Desired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.

摘要翻译： 用电子束照射正型光致抗蚀剂膜的所需部分，并且至少使用电子束照射的区域的区域进一步用紫外线照射，然后显影。 在用电子束照射的区域中，感光性基团被破坏。 因此，即使用紫外线照射也不会增加光致抗蚀剂膜的溶解度，并且通过显影形成抗蚀剂图案。