Invention Grant
US5714790A Semiconductor device with an indium-tin-oxide in contact with a
semiconductor or metal
失效
具有与半导体或金属接触的氧化铟锡的半导体器件
- Patent Title: Semiconductor device with an indium-tin-oxide in contact with a semiconductor or metal
- Patent Title (中): 具有与半导体或金属接触的氧化铟锡的半导体器件
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Application No.: US635213Application Date: 1996-04-17
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Publication No.: US5714790APublication Date: 1998-02-03
- Inventor: Masaru Sakamoto
- Applicant: Masaru Sakamoto
- Applicant Address: JPX Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Priority: JPX4-075879 19920228; JPX4-358559 19921228
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/136 ; G02F1/1368 ; H01L21/318 ; H01L29/45 ; H01L29/78 ; H01L29/786 ; H01L31/0224 ; H01L29/04 ; H01L31/062
Abstract:
A semiconductor device has an ITO film which is in contact with a semiconductor or a metal, the ITO film having an insulating film with SiN as the main constituent provided on or under at least a portion of the ITO film.
Public/Granted literature
- US5115984A Process of grinding grains Public/Granted day:1992-05-26
Information query
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