发明授权
- 专利标题: Electrostatic protective device
- 专利标题(中): 静电保护装置
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申请号: US632158申请日: 1996-04-15
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公开(公告)号: US5714794A公开(公告)日: 1998-02-03
- 发明人: Kouichi Tsuyama , Atsushi Suzunaga , Atsushi Nishimura , Tadashi Isono
- 申请人: Kouichi Tsuyama , Atsushi Suzunaga , Atsushi Nishimura , Tadashi Isono
- 申请人地址: JPX
- 专利权人: Hitachi Chemical Company, Ltd.
- 当前专利权人: Hitachi Chemical Company, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX7-092519 19950418; JPX7-092520 19950418; JPX7-092521 19950418; JPX7-235297 19950913; JPX7-235298 19950913
- 主分类号: H01T4/08
- IPC分类号: H01T4/08 ; H05K1/02 ; H05K3/00 ; H05K3/34 ; H05K3/40 ; H05K3/42 ; H01L29/00 ; H01L23/34 ; H01L23/48
摘要:
Provided is an electrostatic protective device which is highly effective in protecting relatively vulnerable devices such as IC's and LSI's from electrostatic damages, and a method for fabricating an electrostatic protective device which can simplify the structure as compared with the conventional devices sealed in a glass container, and can reduce the size and cost of the device. The chip type electrostatic protective device comprises an inner insulating layer made of organic resin material and provided with a plurality of holes for defining air gaps, a pair of outer insulating layers placed on both sides of the inner insulating layer, and circuit segments defining a discharge gap in each of the air gaps. Holes for interconnection are formed in the laminated assembly, and the interior of each of the holes is turned electroconductive. The assembly is then cut apart into individual chip type electrostatic protective device by cutting through each of the holes for interconnection so as to define terminals for interconnection.
公开/授权文献
- US5139820A Method of manufacturing ceramic insulated wire 公开/授权日:1992-08-18