发明授权
US5716881A Process to fabricate stacked capacitor DRAM and low power thin film
transistor SRAM devices on a single semiconductor chip
失效
在单个半导体芯片上制造叠层电容器DRAM和低功率薄膜晶体管SRAM器件的工艺
- 专利标题: Process to fabricate stacked capacitor DRAM and low power thin film transistor SRAM devices on a single semiconductor chip
- 专利标题(中): 在单个半导体芯片上制造叠层电容器DRAM和低功率薄膜晶体管SRAM器件的工艺
-
申请号: US623243申请日: 1996-03-28
-
公开(公告)号: US5716881A公开(公告)日: 1998-02-10
- 发明人: Mong-Song Liang , Shou-Gwo Wuu , Chen-Jong Wang , Chung-Hui Su
- 申请人: Mong-Song Liang , Shou-Gwo Wuu , Chen-Jong Wang , Chung-Hui Su
- 申请人地址: TWX Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TWX Hsin-Chu
- 主分类号: H01L21/8239
- IPC分类号: H01L21/8239 ; H01L21/8242 ; H01L21/8244 ; H01L27/105 ; H01L27/11
摘要:
A fabrication process for integrating stacked capacitor, DRAM devices, and thin film transistor, SRAM devices, has been developed. The fabrication process features combining key operations used to create transfer gate transistor structures, and access transistor structures for the DRAM and SRAM devices. In addition, process steps, used to create a capacitor structure, for the DRAM device, and a thin film transistor structure, for the SRAM device, are also shared. Another key feature of this invention is a buried contact structure, used for the SRAM device.
公开/授权文献
- USD330954S Cat garment 公开/授权日:1992-11-10