发明授权
- 专利标题: Semiconductor device sealed with molded resin
- 专利标题(中): 用模制树脂密封的半导体器件
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申请号: US632836申请日: 1996-04-16
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公开(公告)号: US5717232A公开(公告)日: 1998-02-10
- 发明人: Kazuhiko Inoue , Souichi Imamura , Masanori Ochi , Shigehiro Hosoi , Toru Suga , Takashi Kimura
- 申请人: Kazuhiko Inoue , Souichi Imamura , Masanori Ochi , Shigehiro Hosoi , Toru Suga , Takashi Kimura
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX5-185057 19930727; JPX6-088118 19940426
- 主分类号: H01L21/338
- IPC分类号: H01L21/338 ; H01L23/29 ; H01L23/31 ; H01L23/66 ; H01L29/812 ; H01L29/80 ; H01L23/58
摘要:
A semiconductor device has an active layer formed on a semiconductor substrate with different types of junctions, a source region, a drain region, a T-shaped gate electrode in which the cross-sectional area of the upper surface is larger than that of the lower surface, a first dielectric layer covering at least the exposed surface of the active layer, and the gate electrode, and a second dielectric layer enclosing the first dielectric layer. In the device, when the specific inductive capacities of the first and second dielectric layers are .epsilon.(1) and .epsilon.(2) respectively .epsilon.(1)
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