发明授权
US5721153A Method of making capacitor of highly integrated semiconductor device
using multiple insulation layers
失效
使用多层绝缘层制造高度集成的半导体器件的电容器的方法
- 专利标题： Method of making capacitor of highly integrated semiconductor device using multiple insulation layers
- 专利标题（中）： 使用多层绝缘层制造高度集成的半导体器件的电容器的方法
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申请号： US604300申请日： 1996-02-21
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公开(公告)号： US5721153A公开(公告)日： 1998-02-24
- 发明人: Kyung-hoon Kim , Young-wook Park , Cha-young Yoo
- 申请人： Kyung-hoon Kim , Young-wook Park , Cha-young Yoo
- 申请人地址： KRX Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suwon
- 优先权： KRX95-6109 19950322
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/822 ; H01L21/8242 ; H01L27/108
摘要：
A capacitor of a highly integrated semiconductor device and a manufacturing method thereof is provided. In the highly integrated semiconductor device, an HSG polysilicon layer pattern is formed having a multitude of hemispherical grains (HSG) on the top and side surfaces of the storage electrode. Thus, the etching of and damage to the HSG polysilicon layer pattern can be prevented, and capacitance can be increased by maximizing the surface area of the storage electrode.
公开/授权文献
- US5071591A Antifoaming and defoaming compositions 公开/授权日：1991-12-10
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