发明授权
US5722877A Technique for improving within-wafer non-uniformity of material removal
for performing CMP
失效
用于改善晶片内不均匀性的技术，用于进行CMP的材料去除
- 专利标题： Technique for improving within-wafer non-uniformity of material removal for performing CMP
- 专利标题（中）： 用于改善晶片内不均匀性的技术，用于进行CMP的材料去除
-
申请号： US729614申请日： 1996-10-11
-
公开(公告)号： US5722877A公开(公告)日： 1998-03-03
- 发明人: Anthony S. Meyer , Thomas G. Mallon , Bradley Withers , Douglas W. Young
- 申请人： Anthony S. Meyer , Thomas G. Mallon , Bradley Withers , Douglas W. Young
- 申请人地址： CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： CA Fremont
- 主分类号： B24B7/22
- IPC分类号： B24B7/22 ; B24B21/06 ; B24B37/04 ; B24B21/00
摘要：
A platen ring for use with a platen on a linear polisher, in which the platen ring is used to reduce fluctuation of the belt/pad assembly as it encounters the platen. The platen ring is disposed around the platen so that a fluctuation of the belt/pad assembly is dampened before the belt/pad assembly engages the platen. Reduction of the belt/pad fluctuation ensures a reduction in the within-wafer non-uniformity and provides for a more uniform polishing rate across the surface of the wafer.
公开/授权文献
- US5319600A Semiconductor memory device with noise immunity 公开/授权日：1994-06-07
信息查询
