A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.