A methodology for producing an edge aligned implant beneath an electrode with reduced lateral spread, comprising the steps of: providing a dielectric layer on a substrate; forming an etch-stop layer on the dielectric layer; forming a sacrificial material layer on the etch-stop layer; patterning the sacrificial layer with openings to expose the etch-stop layer and which openings corresponding to gate electrode positions; implanting dopant atoms through the opening into the substrate in regions adjacent to at least one edge of the opening in the sacrificial layer; depositing electrode material into the openings and onto the sacrificial layer; forming an electrode layer, either by itself of with another layer deposited or grown over it to allow alteration to provide an etch rate differential. The material that etches relatively slowly becomes or protects the gate electrode region. The alteration is done by a process such as diffusion or irradiation.