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    Method of performing edge-aligned implants
    1.
    发明授权
    Method of performing edge-aligned implants 失效
    执行边缘对齐植入物的方法

    公开(公告)号：US5726080A

    公开(公告)日：1998-03-10

    申请号：US757715

    申请日：1996-11-26

    申请人： David L. Losee ,  James P. Lavine ,  Gilbert A. Hawkins ,  Mary R. Suchanski

    发明人： David L. Losee ,  James P. Lavine ,  Gilbert A. Hawkins ,  Mary R. Suchanski

    IPC分类号： H01L21/339 ,  H01L21/265 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L29/66954

    摘要： A methodology for producing an edge aligned implant beneath an electrode with reduced lateral spread, comprising the steps of: providing a dielectric layer on a substrate; forming an etch-stop layer on the dielectric layer; forming a sacrificial material layer on the etch-stop layer; patterning the sacrificial layer with openings to expose the etch-stop layer and which openings corresponding to gate electrode positions; implanting dopant atoms through the opening into the substrate in regions adjacent to at least one edge of the opening in the sacrificial layer; depositing electrode material into the openings and onto the sacrificial layer; forming an electrode layer, either by itself of with another layer deposited or grown over it to allow alteration to provide an etch rate differential. The material that etches relatively slowly becomes or protects the gate electrode region. The alteration is done by a process such as diffusion or irradiation.

    摘要翻译： 一种用于在具有减小的横向扩展的电极下方产生边缘对准植入物的方法，包括以下步骤：在基底上提供介电层; 在所述电介质层上形成蚀刻停止层; 在所述蚀刻停止层上形成牺牲材料层; 用开口图案化牺牲层以暴露蚀刻停止层以及对应于栅电极位置的哪些开口; 在与所述牺牲层中的所述开口的至少一个边缘相邻的区域中将掺杂剂原子通过所述开口注入到所述衬底中; 将电极材料沉积到所述开口中并到达所述牺牲层上; 形成电极层，或者通过其上沉积或生长在其上的另一层本身，以允许改变以提供蚀刻速率差。 蚀刻相对缓慢的材料变成或保护栅电极区域。 改变是通过扩散或照射等过程完成的。

    Method of making edge-aligned implants and electrodes therefor
    2.
    发明授权
    Method of making edge-aligned implants and electrodes therefor 失效
    制造边缘对准植入物和电极的方法

    公开(公告)号：US4613402A

    公开(公告)日：1986-09-23

    申请号：US750204

    申请日：1985-07-01

    申请人： David L. Losee ,  James P. Lavine

    发明人： David L. Losee ,  James P. Lavine

    IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L21/8234 ,  H01L27/14 ,  H01L27/148 ,  H01L29/76 ,  H01L29/772 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

    CPC分类号： H01L29/66954 ,  H01L21/823406

    摘要： There is disclosed a process particularly suited for making CCD's. The process comprises the steps of(a) depositing a layer of conductive material above a semiconductor substrate;(b) forming a patterned mask above the conductive layer, the pattern exposing spaced-apart strip portions of the conductive layer;(c) ion-implanting dopant strips into the substrate through the conductive layer strip portions exposed by the patterned mask;(d) removing a portion of the mask but retaining the rest so as to expose the conductive layer over first portions of the substrate that contain an implanted dopant strip and over portions of the substrate adjacent to the first portions;(e) forming on the conductive layer between the retained mask portions, and above the implanted dopant strips, strips of a material resistant to an etchant for the conductive material;(f) removing the retained mask portions; and(g) etching away the conductive layer where the latter is not covered with the etchant-resistant material so as to leave conductive strips overlying the implanted strips.

    摘要翻译： 公开了一种特别适用于制造CCD的工艺。 该方法包括以下步骤：（a）在半导体衬底上沉积导电材料层; （b）在所述导电层上方形成图案化掩模，所述图案暴露所述导电层的间隔开的条带部分; （c）通过由图案化掩模暴露的导电层条带部分将掺杂剂条带离子注入到衬底中; （d）去除所述掩模的一部分，但保留其余部分，以使所述导电层暴露于所述衬底的第一部分上，所述第一部分包含注入的掺杂剂条和所述衬底的与所述第一部分相邻的部分; （e）在所述保护的掩模部分之间和所述注入的掺杂剂条带之上的所述导电层上形成耐导电材料的蚀刻剂的材料条; （f）去除保留的掩模部分; 并且（g）蚀刻掉导电层，其中后者不被耐蚀刻材料覆盖，以便留下覆盖在植入条上的导电条。

    Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors
    3.
    发明授权
    Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors 失效
    制造用于固态图像传感器的自对准高掺杂光电二极管的方法

    公开(公告)号：US06306676B1

    公开(公告)日：2001-10-23

    申请号：US08628063

    申请日：1996-04-04

    申请人： Eric G. Stevens ,  Stephen L. Kosman ,  David L. Losee ,  James P. Lavine

    发明人： Eric G. Stevens ,  Stephen L. Kosman ,  David L. Losee ,  James P. Lavine

    IPC分类号： H01L2100

    CPC分类号： H01L27/14812 ,  H01L27/14683 ,  H01L27/14843

    摘要： A method and apparatus of making high energy implanted photodiode that is self aligned with the transfer gate, the high energy implant is defined by providing a substrate, or well, of a first conductivity type, defining a charge coupled device within the substrate, or well, such that gate electrode layers are allowed to exist over areas to contain photodiodes during construction of the charge coupled device, patterning a masking layer to block high energy implants such that openings in the masking layer are formed over the areas of the photodiodes, anisotropically etching down through the gate electrode over the photodiodes to the gate dielectric material, implanting photodiodes with high-energy ions of a second conductivity type opposite the first conductivity type and creating a pinned photodiode by employing a shallow implant of the first conductivity type. The apparatus made by this method yields a photodiode employing high energy ions to form the P/N junction that is self aligned with the transfer gate.

    摘要翻译： 一种制造与传输栅极自对准的高能量注入光电二极管的方法和装置，高能量注入是通过提供第一导电类型的衬底或阱来限定的，该衬底或阱限定衬底或阱内的电荷耦合器件 ，使得栅极电极层在电荷耦合器件的构造期间允许存在于包含光电二极管的区域上，构图掩模层以阻挡高能量注入，使得掩模层中的开口形成在光电二极管的区域上，各向异性蚀刻 向下通过光电二极管上的栅电极到栅介电材料，用与第一导电类型相反的第二导电类型的高能离子注入光电二极管，并通过采用第一导电类型的浅埋入物产生钉扎光电二极管。 通过该方法制造的装置产生使用高能离子的光电二极管，以形成与传输门自对准的P / N结。

    Charge coupled device with edge aligned implants and electrodes
    4.
    发明授权
    Charge coupled device with edge aligned implants and electrodes 失效
    电荷耦合器件具有边缘对准的植入物和电极

    公开(公告)号：US5641700A

    公开(公告)日：1997-06-24

    申请号：US558629

    申请日：1995-11-14

    申请人： Gilbert A. Hawkins ,  David L. Losee

    发明人： Gilbert A. Hawkins ,  David L. Losee

    IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/423 ,  H01L21/265 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L29/66954 ,  H01L29/42396

    摘要： A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.

    摘要翻译： 完全自对准的电荷耦合器件（CCD）包括具有植入的势垒和/或存储区域的半导体衬底，设置在衬底上的绝缘介电层，与至少一个植入物自对准的紧密间隔的电极的第一层 在第一电极下面，与第一电极自对准的第二层紧密间隔的电极，以及与第一电极自对准的第二电极下方的至少一个植入物。 制造完全自对准CCD的工艺包括以下步骤：首先在半导体衬底上形成均匀的绝缘介电层; 然后在介电层上形成牺牲层，通过去除该层的选定部分图案化牺牲层，图案化牺牲层的至少一个边缘用作用于离子注入到半导体衬底中的掩模，掩模任选地还包括光致抗蚀剂 ; 然后仅形成除去牺牲层的那些区域，第一栅电极; 然后去除牺牲层，从而暴露紧密间隔的第一栅电极的侧壁，至少一个侧壁用作第二离子注入到半导体衬底中的掩模，掩模可选地还包括光致抗蚀剂; 然后在所述第一栅极的暴露表面上形成第一氧化物层; 然后沉积和构图第二栅极电极层以形成设置在第一栅电极的部分之间的第二栅电极。

    Method of making a charge coupled device with edge aligned implants and electrodes
    6.
    发明授权
    Method of making a charge coupled device with edge aligned implants and electrodes 失效
    制造具有边缘对准植入物和电极的电荷耦合器件的方法

    公开(公告)号：US5516716A

    公开(公告)日：1996-05-14

    申请号：US349120

    申请日：1994-12-02

    申请人： Gilbert A. Hawkins ,  David L. Losee

    发明人： Gilbert A. Hawkins ,  David L. Losee

    IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/423

    CPC分类号： H01L29/66954 ,  H01L29/42396

    摘要： A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.

    摘要翻译： 完全自对准的电荷耦合器件（CCD）包括具有植入的势垒和/或存储区域的半导体衬底，设置在衬底上的绝缘介电层，与至少一个植入物自对准的紧密间隔的电极的第一层 在第一电极下面，与第一电极自对准的第二层紧密间隔的电极，以及与第一电极自对准的第二电极下方的至少一个植入物。 制造完全自对准CCD的工艺包括以下步骤：首先在半导体衬底上形成均匀的绝缘介电层; 然后在介电层上形成牺牲层，通过去除该层的选定部分图案化牺牲层，图案化牺牲层的至少一个边缘用作用于离子注入到半导体衬底中的掩模，掩模任选地还包括光致抗蚀剂 ; 然后仅形成除去牺牲层的那些区域，第一栅电极; 然后去除牺牲层，从而暴露紧密间隔的第一栅电极的侧壁，至少一个侧壁用作第二离子注入到半导体衬底中的掩模，掩模可选地还包括光致抗蚀剂; 然后在所述第一栅极的暴露表面上形成第一氧化物层; 然后沉积和构图第二栅极电极层以形成设置在第一栅电极的部分之间的第二栅电极。

    Lightshield architecture for interline transfer image sensors
    7.
    发明授权
    Lightshield architecture for interline transfer image sensors 有权
    Lightshield架构用于行间传输图像传感器

    公开(公告)号：US07585695B2

    公开(公告)日：2009-09-08

    申请号：US11491009

    申请日：2006-07-21

    申请人： David N. Nichols ,  David L. Losee ,  Christopher Parks

    发明人： David N. Nichols ,  David L. Losee ,  Christopher Parks

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14812 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14837 ,  H01L27/14843

    摘要： An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

    摘要翻译： 描述了可以高速操作并且具有低图像拖尾的行间传送型图像感测装置。 该装置包括难熔金属层，其用于垂直电荷转移区域上的遮光罩和用于垂直电荷转移区域的多晶硅（多晶硅）栅电极的低电阻捆扎的布线层。 由单独的金属化层提供的插头将难熔光屏蔽层连接到多晶硅栅电极。 这些插头允许在耐火光屏蔽图案化之后进行高温处理，以改善传感器性能，而不会降低多晶硅栅电极或耐火遮光层。

    Method of making color filter arrays by colorant transfer using chemical mechanical polishing
    8.
    发明授权
    Method of making color filter arrays by colorant transfer using chemical mechanical polishing 失效
    使用化学机械抛光通过着色剂转印制造滤色器阵列的方法

    公开(公告)号：US5776641A

    公开(公告)日：1998-07-07

    申请号：US787732

    申请日：1997-01-24

    申请人： Luther C. Roberts ,  David L. Losee

    发明人： Luther C. Roberts ,  David L. Losee

    IPC分类号： B41M5/385 ,  G02B5/20 ,  G03F7/00

    CPC分类号： G03F7/0007 ,  G02B5/201 ,  B41M5/385

    摘要： A method of making a color filter array on a first substrate having an array of pixels, comprising the steps of: depositing and patterning a photoresist layer on the substrate layer to form selected openings over pixels in the array; providing a transferable colorant layer on a second substrate and positioning such transferable layer in transferable relationship with the first substrate; transferring the colorant material to the photoresist layer on the first substrate, removing the patterned photoresist layer by chemical mechanical polishing, leaving behind the colorant material in the position of the openings over the selected pixels.

    摘要翻译： 一种在具有像素阵列的第一衬底上制造滤色器阵列的方法，包括以下步骤：在所述衬底层上沉积和图案化光致抗蚀剂层以在所述阵列中的像素上形成选定的开口; 在第二基底上提供可转移的着色剂层，并将这种可转移层定位成与第一基底可转移的关系; 将着色剂材料转移到第一衬底上的光致抗蚀剂层，通过化学机械抛光去除图案化的光刻胶层，使着色剂材料留在所选择的像素上的开口位置。