A semiconductor memory device capable of simultaneously providing volatile and non-volatile portions is disclosed having a plurality of memory mats, and a plurality of plate electrodes and a plurality of memory mats each provided in one-to-one correspondence with the memory maps. The memory mats each include a plurality of word lines, a plurality of bit lines and a plurality of memory cells provided at the intersections of the word lines and the bit lines. The memory cells each include an information storage capacitor having a ferroelectric film, and an address selection MOSFET. The information storage capacitor has a pair of electrodes, one of which is connected to the plate electrode that corresponds to the memory mat in which the information storage capacitor is included. A first voltage or a second voltage is selectively applied to each of the plate electrodes according to data held in the memory circuit corresponding to the plate electrode. When the first voltage is applied to the plate electrode, the information storage capacitors connected to the plate electrode are made incapable of polarization reversal irrespective of a binary write signal given to the bit lines. When the second voltage is applied to the plate electrode, the information storage capacitors connected to the plate electrode are made capable of polarization inversion in response to a binary write signal given to the bit lines.