发明授权
US5731634A Semiconductor device having a metal film formed in a groove in an
insulating film
失效
具有形成在绝缘膜中的槽中的金属膜的半导体器件
- 专利标题： Semiconductor device having a metal film formed in a groove in an insulating film
- 专利标题（中）： 具有形成在绝缘膜中的槽中的金属膜的半导体器件
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申请号： US659389申请日： 1996-06-06
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公开(公告)号： US5731634A公开(公告)日： 1998-03-24
- 发明人: Mie Matsuo , Haruo Okano , Nobuo Hayasaka , Kyoichi Suguro , Hideshi Miyajima , Jun-ichi Wada
- 申请人： Mie Matsuo , Haruo Okano , Nobuo Hayasaka , Kyoichi Suguro , Hideshi Miyajima , Jun-ichi Wada
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-205579 19920731; JPX5-183880 19930726
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80.degree. to 500.degree. C.
公开/授权文献
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