发明授权
US5731970A Power conversion device and semiconductor module suitable for use in the
device
失效
电源转换装置和适用于该装置的半导体模块
- 专利标题: Power conversion device and semiconductor module suitable for use in the device
- 专利标题(中): 电源转换装置和适用于该装置的半导体模块
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申请号: US473937申请日: 1995-06-07
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公开(公告)号: US5731970A公开(公告)日: 1998-03-24
- 发明人: Mutsuhiro Mori , Ryuichi Saito , Shin Kimura , Syuuji Saitoo , Kiyoshi Nakata , Akira Horie , Yoshihiko Koike , Shigeki Sekine
- 申请人: Mutsuhiro Mori , Ryuichi Saito , Shin Kimura , Syuuji Saitoo , Kiyoshi Nakata , Akira Horie , Yoshihiko Koike , Shigeki Sekine
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX1-331334 19891222; JPX2-045434 19900228; JPX3-241681 19910920; JPX4-013684 19920129
- 主分类号: H01L23/04
- IPC分类号: H01L23/04 ; H01L23/24 ; H01L25/07 ; H02M7/00 ; H02M7/48 ; H02M7/487 ; H03K17/0814 ; H02M7/5387
摘要:
An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.
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