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US5736772A Bifurcated polysilicon gate electrodes and fabrication methods 失效
分叉多晶硅栅电极及其制造方法

Bifurcated polysilicon gate electrodes and fabrication methods
摘要：
A polysilicon gate electrode of an integrated circuit field effect transistor is formed in two portions which are isolated from one another. The first portion is formed on the gate insulating region. The second portion is formed on the semiconductor substrate outside the gate insulating region and is electrically insulated from the first portion. Since the first and second portions of the polysilicon gate electrode are isolated from one another, only the charge which is on the first polysilicon portion contributes to gate insulating region degradation during plasma etching. After polysilicon gate electrode formation, the first and second portions may be electrically connected by a link. Field effect transistor performance and/or reliability are thereby increased.
摘要（中）：

集成电路场效应晶体管的多晶硅栅电极形成为彼此隔离的两部分。 第一部分形成在栅绝缘区上。 第二部分形成在栅极绝缘区域外部的半导体衬底上，并与第一部分电绝缘。 由于多晶硅栅电极的第一部分和第二部分彼此隔离，所以在等离子体蚀刻期间仅仅第一多晶硅部分上的电荷有助于栅极绝缘区域的劣化。 在多晶硅栅电极形成之后，第一和第二部分可以通过链路电连接。 从而增加场效应晶体管的性能和/或可靠性。

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