发明授权
- 专利标题: Driving method for solid state imaging device
- 专利标题(中): 固态成像装置的驱动方法
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申请号: US526453申请日: 1995-09-11
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公开(公告)号: US5739851A公开(公告)日: 1998-04-14
- 发明人: Shinji Ohsawa , Yoshiyuki Matsunaga , Nahoko Endo
- 申请人: Shinji Ohsawa , Yoshiyuki Matsunaga , Nahoko Endo
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX6-220100 19940914; JPX7-209603 19950817
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H04N5/335 ; H04N5/341 ; H04N5/357 ; H04N5/369 ; H04N5/3728 ; H04N5/378
摘要:
A driving method for a solid state imaging device with a horizontal blanking period for each scanning line and a vertical blanking period for each field and including a plurality of cell sections formed in a matrix form on a semiconductor substrate, the plurality of cell sections including a plurality of signal charge storage sections for storing signal charges, a plurality of readout sections for reading out the signal charges from the signal charge storing sections, a plurality of signal charge transferring sections for transferring the readout signal charges, and a plurality of pixel electrodes electrically connected to the plurality of signal charge storage sections, a photoelectric converting layer including at least one photoelectric converting film stacked on the plurality of pixel electrodes, the photoelectric converting film being electrically connected to the electrodes and having a pn junction, and at least one transparent electrode formed on the photoelectric converting film.
公开/授权文献
- US4578143A Method for forming a single crystal silicon layer 公开/授权日:1986-03-25
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