摘要:
A pixel sensor element (200) including a photodetector (201) and a storage assembly having N storage arrays (205), each having an input shift register (207) and an output shift register (215) each with a number M of storage cells arranged in a column, and a storage shift register (211) with a number M of rows of storage cells, each row comprising a number P of storage cells, for signal transfer from the input shift register (207) to the output shift register (215). A number N of independently driveable signal transfer regions (203) transfer the signal from the photodetector (201) to a first cell (210) of one of a respective one of the input shift registers (207). A number N of signal read-out regions (219) read the signal from a last cell (217) of a respective one of the output shift registers (215). N is 2 or more. M is 1 or more. P is 1 or more. Image sensors, imaging devices, storage assemblies, and methods are also provided.
摘要:
Provided is an a imaging device that acquires a distance image excluding influence of background light in one frame scanning period and acquires a visible image in a separate frame from a single imaging sensor, and includes an infrared light source that emits infrared light, and a solid state imaging device including a plurality of first pixels and a plurality of second pixels, which respectively include vertical overflow drains, and are arranged in a matrix on a semiconductor substrate, the plurality of first pixels converting the infrared light into signal charges, and the plurality of second pixels converting visible light into signal charges. The solid state imaging device outputs a first signal obtained from the plurality of first pixels in an irradiation period of infrared light, and a second signal obtained from the plurality of first pixels in a non-irradiation period of infrared light, in a first frame scanning period, and outputs a third signal obtained from the plurality of first pixels and a fourth signal obtained from the plurality of second pixels, in a second frame scanning period.
摘要:
A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.
摘要:
A driving method for a solid-state image sensing device having a plurality of sensor portions being disposed two-dimensionally in a horizontal and a vertical directions, and a vertical charge transfer portion being disposed between said plurality of sensor portions and being provided with transfer electrodes of a plurality of systems disposed along its disposed direction, including the steps of; selectively applying high level driving pulses to the transfer electrodes of said plurality of systems in respective sectional periods in a vertical transfer period, and transferring the signal charges read out from said plurality of sensor portions in the vertical direction, wherein a sectional period in a vertical transfer period, in which the number of systems of the transfer electrodes to be applied with high level driving pulses becomes minimum is set longer than that of the other sectional periods. It is thus made possible to increase the handling charge quantity in the vertical charge transfer portion without changing time for transfer in the vertical transfer period.
摘要:
In a case where a thinning operation is implemented at the point when signal charges are read out from each of pixels to thin out pixel information by lines (row), the thinning may be performed only in the vertical direction, but not in the horizontal direction. In an all-pixel-read-out type CCD image pickup element, a discharge controlling section is provided in each of VH transfer stage sections transferring signal charges from vertical CCDs to a horizontal CCD, and where a thinning mode is selected, among those signal charges transferred from a plurality of the vertical CCDs, those of a given set of columns are stopped and discharged at the respective discharge controlling sections, and those of the rest of columns are transferred to the horizontal CCD, and at the same time, those of a given set of lines (rows) are stopped and discharged for all columns, thereby performing the thinning operation over the pixel information in both the vertical and horizontal directions at the VH transfer stage.
摘要:
A method of broadening a dynamic range is applied to a solid-state image sensor of the type including photodiodes each being divided into a main and a subregion different in photosensitivity from each other. While the quantity of light to be incident on a photodiode is reduced, a signal charge is read out only from the main region of the photodiode. The signal charge is digitized and then written to two image memories. Digital signals thus stored in the image memories are respectively amplified by white balance gain circuits with different gains. The resulting digital signals are combined by an image synthesizer. The method can therefore broaden the dynamic range of the image sensor by using only the main regions of the photodiodes.
摘要:
An image pickup device comprises a CCD solid-state imaging element composed of a charge accumulation section and a charge transfer section, a CCD driver for driving the imaging element, a mechanical shutter for switching between the transmitting state and shading state of the subject's image on the imaging element, and a controller for controlling the CCD driver and mechanical shutter. The controller, closes, opens and closes the mechanical shutter in that order. After having discharged charges in the first closing, the device refrains from driving the vertical transfer channel during the period that the channel is exposed to light rays and ends exposure in the presence of a charge transfer pulse. Moreover, in a low-speed shutter, the image pickup device switches to exposure end with the mechanical shutter.
摘要:
The present invention provides a method and apparatus for increasing the frame acquisition rate of an frame transfer CCD sensor by triggering the charge transfer signal TR, which controls the shift of the electrical charges from the light-sensitive cells into the vertical shift register, more than once per frame period, so that more than one image is acquired in the same frame, one above the other. The apparatus is used primarily for surface geometry inspection of high-speed moving objects, wherein acquired CCD images are thin, substantially horizontal profile lines.
摘要:
An electronic imaging system includes a CCD image sensor arrangement having a two dimensional array of pixels. The pixel array converts light incident thereon to an electric signal. The pixels are arranged in a plurality of horizontal rows or lines, the lines being arranged vertically. A control arrangement selectively controls operational modes of the system. One mode provides for sequential scan reading out of pixel signals for entire lines of the CCD for still picture recording. Another mode provides for reading out pixel signals concerning k (k is a positive integer) vertically continuous lines of the CCD for still picture recording or dynamic image processing. Thus it is possible to provide a high pixel density solid-state image sensor output at a high frame rate without use of any high drive frequency.
摘要:
A solid-state image capturing element having a plurality of transfer electrodes arranged on the surface of a semiconductor substrate. The element stores information charge generated in response to received light incident into the semiconductor substrate, in a potential well which is formed by the action of the transfer electrode. The element has a photodiode buried in the vicinity and under the transfer electrode.