Invention Grant
US5741363A Interiorly partitioned vapor injector for delivery of source reagent
vapor mixtures for chemical vapor deposition
失效
用于输送用于化学气相沉积的源试剂蒸气混合物的内部分隔蒸气喷射器
- Patent Title: Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
- Patent Title (中): 用于输送用于化学气相沉积的源试剂蒸气混合物的内部分隔蒸气喷射器
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Application No.: US621088Application Date: 1996-03-22
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Publication No.: US5741363APublication Date: 1998-04-21
- Inventor: Peter C. Van Buskirk , James A. Fair , David E. Kotecki
- Applicant: Peter C. Van Buskirk , James A. Fair , David E. Kotecki
- Applicant Address: CT Danbury NY Armonk CA Palo Alto
- Assignee: Advanced Technology Materials, Inc.,International Business Machines Corporation,Varian Corporation
- Current Assignee: Advanced Technology Materials, Inc.,International Business Machines Corporation,Varian Corporation
- Current Assignee Address: CT Danbury NY Armonk CA Palo Alto
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/455 ; C23C16/00
Abstract:
A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to enable formation of CVD thin films of highly uniform composition and thickness.
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