发明授权
- 专利标题： Method of forming electrode of semiconductor device
- 专利标题（中）： 形成半导体器件电极的方法
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申请号： US788107申请日： 1997-01-23
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公开(公告)号： US5744398A公开(公告)日： 1998-04-28
- 发明人: Jeong Soo Byun , Byung Hak Lee
- 申请人： Jeong Soo Byun , Byung Hak Lee
- 申请人地址： KRX Chungcheongbuk-do
- 专利权人： IG Semicon Co., Ltd.
- 当前专利权人： IG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-do
- 优先权： KRX1996/31654 19960731
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L21/336 ; H01L23/52 ; H01L29/78 ; H01L21/44 ; H01L21/48
摘要：
A method of forming an electrode of a semiconductor device includes the steps of forming an insulating layer on a semiconductor substrate, forming a tungsten silicide layer on the insulating layer, implanting impurity ions into the tungsten silicide layer to form an impurity region in a lower portion of the tungsten silicide layer, and carrying out a heat treatment to the substrate on which the tungsten silicide layer is formed.
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