发明授权
- 专利标题： Method of manufacturing a semiconductor memory device
- 专利标题（中）： 制造半导体存储器件的方法
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申请号： US613555申请日： 1996-03-11
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公开(公告)号： US5753527A公开(公告)日： 1998-05-19
- 发明人: Hiromi Itoh , Tomonori Okudaira , Keiichiro Kashihara
- 申请人： Hiromi Itoh , Tomonori Okudaira , Keiichiro Kashihara
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-283672 19931112
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L27/108 ; H01L21/70
摘要：
A first interlayer insulating film having a second contact hole is formed on a main surface of a semiconductor substrate 1 in a peripheral circuitry. A second plug electrode of the same material as a first plug electrode in a memory cell array is formed in the second contact hole. A pad layer is formed over the second plug electrode and a top surface of the first interlayer insulating film. The pad layer and a capacitor lower electrode are made of the same material. The pad layer is covered with the second interlayer insulating film. A third contact hole is formed at a portion of the second interlayer insulating film located above the pad layer. A first aluminum interconnection layer is formed in the third contact hole. Thereby, a contact can be formed easily between the interconnection layer and the main surface of the semiconductor substrate in the peripheral circuitry of a DRAM, and a manufacturing process can be simplified.
公开/授权文献
- US5190393A Device at expandable mounting sleeve 公开/授权日：1993-03-02
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