发明授权
US5760476A Interconnect run between a first point and a second point in a
semiconductor device for reducing electromigration failure
失效
互连在半导体器件的第一点和第二点之间运行,以减少电迁移故障
- 专利标题: Interconnect run between a first point and a second point in a semiconductor device for reducing electromigration failure
- 专利标题(中): 互连在半导体器件的第一点和第二点之间运行,以减少电迁移故障
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申请号: US729200申请日: 1996-10-15
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公开(公告)号: US5760476A公开(公告)日: 1998-06-02
- 发明人: Charles J. Varker , Michael L. Dreyer , Thomas E. Zirkle
- 申请人: Charles J. Varker , Michael L. Dreyer , Thomas E. Zirkle
- 申请人地址: IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: IL Schaumburg
- 主分类号: H01L21/822
- IPC分类号: H01L21/822 ; H01L23/528 ; H01L27/04 ; H01L23/48 ; H01L23/532 ; H01L29/46
摘要:
In a first approach, an interconnect structure (10) reduces peak localized interconnect current density by distributing current flow around the perimeter (22) of an interlevel connector (14) in a semiconductor device. A first interconnect level (12) is connected to a second interconnect level by the interlevel connector (14), and the perimeter (22) of the interlevel connector (14) is located at the juncture between the first interconnect level (12) and the interlevel connector (14). The first interconnect level (12) has two or more fingers (16,18,20) protruding therefrom that connect to the perimeter (22) of the interlevel connector (14). At least one opening (36, 38) is disposed between two of the fingers (16,18,20) for dividing current flow. In a second approach, an interconnect level (50) is formed of a polycrystalline material and connects two points in the semiconductor device using essentially only a plurality of branches (52) each having a linewidth (W) less than the median grain size of the polycrystalline material. In a third approach, an interconnect run (60) consists essentially of a plurality of upper and lower straps (62, 64) connected by a plurality of interlevel connectors (66) so that a chain is provided which connects substantially the full length between two points in the semiconductor device.
公开/授权文献
- US4636982A Semiconductor memory device 公开/授权日:1987-01-13