Invention Grant
- Patent Title: Method of forming a doped field emitter array
- Patent Title (中): 形成掺杂场发射极阵列的方法
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Application No.: US543819Application Date: 1995-10-16
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Publication No.: US5772488APublication Date: 1998-06-30
- Inventor: David A. Cathey , Surjit S. Chadha , Behnam Moradi
- Applicant: David A. Cathey , Surjit S. Chadha , Behnam Moradi
- Applicant Address: ID Boise
- Assignee: Micron Display Technology, Inc.
- Current Assignee: Micron Display Technology, Inc.
- Current Assignee Address: ID Boise
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J9/02 ; H01J63/04
Abstract:
According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.
Public/Granted literature
- USD279516S Goggles Public/Granted day:1985-07-09
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