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公开(公告)号：US07492086B1
公开(公告)日：2009-02-17
申请号：US09489286
申请日：2000-01-21
申请人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
发明人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
CPC分类号： H01J9/025 , H01J2329/00
摘要： According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention, a process for manufacturing a FED is provided comprising the steps of forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to an emission surface of the emitter.
摘要翻译： 根据本发明的一个方面，提供一种场发射显示器，包括：阳极; 位于阳极上的荧光屏; 阴极 阳极和阴极之间的抽空空间; 位于与磷光体相对的阴极上的发射极; 其中所述发射器包括在所述发射体的主体和所述发射极的表面上的正电极元件。 根据本发明的另一方面，提供了一种用于制造FED的方法，包括以下步骤：在所述尖端的主体中形成包含正电荷元件的发射器; 将发射器定位成与荧光体显示屏相对的关系; 在发射极尖端和荧光体显示屏之间产生抽空空间; 并使正电荷元件迁移到发射极的发射表面。
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公开(公告)号：US06515414B1
公开(公告)日：2003-02-04
申请号：US09564356
申请日：2000-05-01
申请人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
发明人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
IPC分类号： H01J162
CPC分类号： H01J9/025 , H01J2329/00
摘要： According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.
摘要翻译： 根据本发明的一个方面，提供一种场发射显示器，包括：阳极; 位于阳极上的荧光屏; 阴极 阳极和阴极之间的抽空空间; 位于与磷光体相对的阴极上的发射极; 其中所述发射器包括在所述发射体的主体和所述发射极的表面上的正电极元件。 根据本发明的另一方面，提供了一种用于制造FED的方法，包括以下步骤：在尖端的主体中形成包含正电荷元件的发射器; 将发射器定位成与荧光体显示屏相对的关系; 在发射极尖端和荧光体显示屏之间产生抽空空间; 并使正电荷元件迁移到发射体的发射表面。
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公开(公告)号：US6057638A
公开(公告)日：2000-05-02
申请号：US105613
申请日：1998-06-26
申请人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
发明人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
CPC分类号： H01J9/025 , H01J2329/00
摘要： According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.
摘要翻译： 根据本发明的一个方面，提供一种场发射显示器，包括：阳极; 位于阳极上的荧光屏; 阴极 阳极和阴极之间的抽空空间; 位于与磷光体相对的阴极上的发射极; 其中所述发射器包括在所述发射体的主体和所述发射极的表面上的正电极元件。 根据本发明的另一方面，提供了一种用于制造FED的方法，包括以下步骤：在尖端的主体中形成包含正电荷元件的发射器; 将发射器定位成与荧光体显示屏相对的关系; 在发射极尖端和荧光体显示屏之间产生抽空空间; 并使正电荷元件迁移到发射体的发射表面。
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公开(公告)号：US5772488A
公开(公告)日：1998-06-30
申请号：US543819
申请日：1995-10-16
申请人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
发明人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
CPC分类号： H01J9/025 , H01J2329/00
摘要： According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.
摘要翻译： 根据本发明的一个方面，提供一种场发射显示器，包括：阳极; 位于阳极上的荧光屏; 阴极 阳极和阴极之间的抽空空间; 位于与磷光体相对的阴极上的发射极; 其中所述发射器包括在所述发射体的主体和所述发射极的表面上的正电极元件。 根据本发明的另一方面，提供了一种用于制造FED的方法，包括以下步骤：在尖端的主体中形成包含正电荷元件的发射器; 将发射器定位成与荧光体显示屏相对的关系; 在发射极尖端和荧光体显示屏之间产生抽空空间; 并使正电荷元件迁移到发射体的发射表面。
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5.发明授权Field emission displays with reduced light leakage having an extractor covered with a silicide nitride formed at a temperature above 1000.degree. C. 有权具有降低的漏光的场发射显示器，具有在高于1000℃的温度下形成的硅化物氮化物覆盖的提取器。
公开(公告)号：US6064075A
公开(公告)日：2000-05-16
申请号：US196263
申请日：1998-11-19
IPC分类号： H01J1/05 , H01J9/02 , H01L21/00 , H01L21/4763 , H01L29/06
CPC分类号： H01J3/021 , H01J29/467 , H01J31/127 , H01J9/148 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
摘要翻译： 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。
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公开(公告)号：US6024620A
公开(公告)日：2000-02-15
申请号：US196302
申请日：1998-11-19
IPC分类号： H01J1/05 , H01J9/02 , H01L21/00 , H01L21/4763 , H01L29/06
CPC分类号： H01J3/021 , H01J29/467 , H01J31/127 , H01J9/148 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
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7.发明授权公开(公告)号：US06507329B2
公开(公告)日：2003-01-14
申请号：US09774812
申请日：2001-01-30
IPC分类号： G09G322
CPC分类号： H01J1/3042 , H01J1/304 , H01J31/127 , H01J2201/319 , H01J2329/00
摘要： A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.
摘要翻译： 用于场发射显示器的半导体器件包括由半导体材料，玻璃，钠钙或塑料形成的衬底。 在基板上形成第一导电材料层。 在第一层上形成第二层微晶硅。 该层具有响应于在场发射显示器的操作期间变化的条件，特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 在第二层上形成一个或多个冷阴极发射体。
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公开(公告)号：US06228667B1
公开(公告)日：2001-05-08
申请号：US09607563
申请日：2000-06-29
IPC分类号： H01L2100
CPC分类号： H01J3/021 , H01J9/148 , H01J29/467 , H01J31/127 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
摘要翻译： 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 硅化物层通过暴露于氮源在高于1000℃的温度下进行处理，硅化物耐受后续的化学侵蚀，例如参与缓冲氧化物蚀刻工艺的化学侵蚀。
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公开(公告)号：US06181308B2
公开(公告)日：2001-01-30
申请号：US08701306
申请日：1996-08-21
IPC分类号： G09G322
CPC分类号： H01J1/3042 , H01J1/304 , H01J31/127 , H01J2201/319 , H01J2329/00
摘要： A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.
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公开(公告)号：US6133056A
公开(公告)日：2000-10-17
申请号：US256882
申请日：1999-02-24
IPC分类号： H01J1/05 , H01J9/02 , H01L21/00 , H01L21/4763 , H01L29/06
CPC分类号： H01J3/021 , H01J29/467 , H01J31/127 , H01J9/148 , H01J2203/0232 , H01J2329/463
摘要： Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
摘要翻译： 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。
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