发明授权
US5772906A Mechanism for uniform etching by minimizing effects of etch rate loading
失效
通过最小化蚀刻速率加载的影响来均匀蚀刻的机理
- 专利标题: Mechanism for uniform etching by minimizing effects of etch rate loading
- 专利标题(中): 通过最小化蚀刻速率加载的影响来均匀蚀刻的机理
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申请号: US652718申请日: 1996-05-30
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公开(公告)号: US5772906A公开(公告)日: 1998-06-30
- 发明人: Susan C. Abraham
- 申请人: Susan C. Abraham
- 申请人地址: CA Fremont
- 专利权人: LAM Research Corporation
- 当前专利权人: LAM Research Corporation
- 当前专利权人地址: CA Fremont
- 主分类号: H01L21/321
- IPC分类号: H01L21/321 ; H01L21/3213 ; H01L21/306
摘要:
A method for etching a layer stack structure on a substrate is provided. The method includes a step of etching the layer stack to a predefined stopping point using a reverse etch rate loading inducing chemistry. The method also includes a step of etching said layer stack through a target layer in the layer stack structure using a natural etch rate loading chemistry.
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