发明授权
US5780351A Semiconductor device having capacitor and manufacturing method thereof
失效
具有电容器的半导体器件及其制造方法
- 专利标题： Semiconductor device having capacitor and manufacturing method thereof
- 专利标题（中）： 具有电容器的半导体器件及其制造方法
-
申请号： US844108申请日： 1997-04-28
-
公开(公告)号： US5780351A公开(公告)日： 1998-07-14
- 发明人: Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
- 申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX5-194617 19930805; JPX5-194618 19930805; JPX6-026514 19940224; JPX6-055552 19940325
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8242 ; H01L21/8246 ; H01L27/115 ; H01L21/20 ; H01L21/00
摘要：
A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
公开/授权文献
信息查询
IPC分类:
