发明授权
US5780873A Semiconductor device capable of easily forming cavity and its
manufacturing method
失效
能够容易地形成腔体的半导体装置及其制造方法
- 专利标题： Semiconductor device capable of easily forming cavity and its manufacturing method
- 专利标题（中）： 能够容易地形成腔体的半导体装置及其制造方法
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申请号： US689689申请日： 1996-08-13
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公开(公告)号： US5780873A公开(公告)日： 1998-07-14
- 发明人: Kazuhiko Itaya , Masahiro Yamamoto , Masaaki Onomura , Hidetoshi Fujimoto , Genichi Hatakoshi , Hideto Sugawara , Masayuki Ishikawa , John Rennie , Shinji Saito
- 申请人： Kazuhiko Itaya , Masahiro Yamamoto , Masaaki Onomura , Hidetoshi Fujimoto , Genichi Hatakoshi , Hideto Sugawara , Masayuki Ishikawa , John Rennie , Shinji Saito
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX7-225381 19950901; JPX8-038118 19960226
- 主分类号： H01L27/15
- IPC分类号： H01L27/15 ; H01L33/06 ; H01L33/08 ; H01L33/14 ; H01L33/16 ; H01L33/20 ; H01L33/32 ; H01S5/00 ; H01S5/02 ; H01S5/323 ; H01S5/343 ; H01S5/40 ; H01L33/00 ; H01L29/04 ; H01L31/036
摘要：
A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.
公开/授权文献
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