发明授权
- 专利标题： Multi-finger MOS transistor with reduced gate resistance
- 专利标题（中）： 具有降低栅极电阻的多指MOS晶体管
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申请号： US749425申请日： 1996-11-15
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公开(公告)号： US5789791A公开(公告)日： 1998-08-04
- 发明人: Albert M. Bergemont
- 申请人： Albert M. Bergemont
- 申请人地址： CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L23/482
- IPC分类号： H01L23/482 ; H01L29/423 ; H01L27/10 ; H01L23/48 ; H01L29/76 ; H01L29/80
摘要：
The gate resistance of a high-frequency multi-finger MOS transistor is reduced by shorting together the ends of each of the gates by utilizing gate contacts, metal regions, vias, and a metal layer. Alternately, the gate resistance is reduced by utilizing a metal line that shorts all of the gate contacts together, and overlies each of the gates. By reducing the gate resistance, the maximum frequency f.sub.MAX of the multi-finger transistor can be increased.
公开/授权文献
- US5177900A Automatic pet door 公开/授权日：1993-01-12
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