发明授权
- 专利标题： Low dielectric constant material for electronics applications
- 专利标题（中）： 用于电子应用的低介电常数材料
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申请号： US483029申请日： 1995-06-07
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公开(公告)号： US5789819A公开(公告)日： 1998-08-04
- 发明人: Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
- 申请人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： C04B38/00
- IPC分类号： C04B38/00 ; H01L21/312 ; H01L21/314 ; H01L21/316 ; H01L21/768 ; H01L23/522 ; H01L23/485
摘要：
This invention provides a semiconductor device with reduced capacitance between adjacent conductors. A porous dielectric layer 28 is formed on conductors 24. A non-porous dielectric layer 30 is formed on porous layer 28, and a second porous dielectric layer 36 is formed on non-porous layer 30. The porous dielectric layers comprise open-pored networks, preferably formed by an atmospheric pressure aerogel process. The present invention allows the construction of semiconductor devices employing multiple layers of conductors with porous low dielectric constant insulation.
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