发明授权
US5793472A Exposure method using reference marks on both the mask and the substrate and capable of providing high alignment precision even after multiple exposures 失效
曝光方法使用掩模和基板上的参考标记,并且即使在多次曝光之后也能够提供高对准精度

  • 专利标题: Exposure method using reference marks on both the mask and the substrate and capable of providing high alignment precision even after multiple exposures
  • 专利标题(中): 曝光方法使用掩模和基板上的参考标记,并且即使在多次曝光之后也能够提供高对准精度
  • 申请号: US940287
    申请日: 1997-09-30
  • 公开(公告)号: US5793472A
    公开(公告)日: 1998-08-11
  • 发明人: Kazuhiko HoriKei NaraSeiji Miyazaki
  • 申请人: Kazuhiko HoriKei NaraSeiji Miyazaki
  • 申请人地址: JPX Tokyo
  • 专利权人: Nikon Corporation
  • 当前专利权人: Nikon Corporation
  • 当前专利权人地址: JPX Tokyo
  • 优先权: JPX6-332971 19941214
  • 主分类号: G03F7/20
  • IPC分类号: G03F7/20 G03F9/00 H01L21/027
Exposure method using reference marks on both the mask and the substrate
and capable of providing high alignment precision even after multiple
exposures
摘要:
Alignment between a mask and a photosensitive substrate is performed using a first reference mark formed on the mask and a second reference mark formed on the photosensitive substrate. After that, the mask and the photosensitive substrate are relatively moved, so that an image of one of a light-shielding pattern and a light-transmitting pattern formed at a position different from the first reference mark on the mask is formed on the second reference mark on the photosensitive substrate. Then, a circuit pattern formed on the mask is transferred onto the photosensitive substrate, and a partial region including the second reference mark is exposed with the image of one of the light-shielding pattern and the light-transmitting pattern.
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