Invention Grant
- Patent Title: Thermal limit circuit with built-in hysteresis
- Patent Title (中): 具有内置迟滞的限热电路
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Application No.: US795942Application Date: 1997-02-05
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Publication No.: US5796280APublication Date: 1998-08-18
- Inventor: Claudio Tuozzolo
- Applicant: Claudio Tuozzolo
- Applicant Address: RI East Greenwich
- Assignee: Cherry Semiconductor Corporation
- Current Assignee: Cherry Semiconductor Corporation
- Current Assignee Address: RI East Greenwich
- Main IPC: H03K3/2893
- IPC: H03K3/2893 ; H03K17/08 ; H03K17/082 ; H03K3/037
Abstract:
A thermal shut down circuit with built-in temperature hysteresis, comprising first and second transistors configured as a bistable trigger circuit. The two transistors switch either a first or second emitter current through a bias resistor, thereby establishing a voltage hysteresis. By applying a reference voltage to the base of the first transistor, temperature dependent state transitions occur. A buffer transistor coupled to the collector of the second transistor allows the thermal shut down circuit to turn ON or OFF an auxiliary circuit. Thermal communication between the auxiliary circuit and the base-emitter junction of the first transistor allows the thermal shut down circuit to shut down the auxiliary circuit when the temperature exceeds a shutdown temperature, and thermal hysteresis built into the thermal shut down circuit prevents undesirable ON-OFF oscillation of the auxiliary circuit.
Public/Granted literature
- US5241957A Bipolar temporary pacing lead and connector and permanent bipolar nerve wire Public/Granted day:1993-09-07
Information query
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