发明授权
- 专利标题： Structure of a mask for use in a lithography process of a semiconductor fabrication
- 专利标题（中）： 用于半导体制造的光刻工艺中的掩模的结构
-
申请号： US834330申请日： 1997-04-15
-
公开(公告)号： US5798192A公开(公告)日： 1998-08-25
- 发明人: Ming-Chu King , Shih-Shiung Chen , Ying-Chen Chao
- 申请人： Ming-Chu King , Shih-Shiung Chen , Ying-Chen Chao
- 申请人地址： TWX Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TWX Hsinchu
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F9/00
摘要：
A structure of a mask for use in a lithography process in a semiconductor fabrication procedure is disclosed. The structure comprising: a mask base being made of transparent material; a plurality of patterns formed on said mask base, said patterns being used for generating an image on a wafer and being made of a conductive opaque material; and a conductive layer formed on said mask base and said plurality of patterns.